Evolution of crystal imperfections during current-stress ageing tests of green InGaN light-emitting diodes

We perform ageing tests under high current on several green InGaN light-emitting diodes and compare the luminous homogeneities of chip surfaces, shapes of external quantum efficiency (EQE) curves, and electroluminescence spectra during different ageing stages. By curve fittings to the EQE curves, wi...

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Veröffentlicht in:	Applied physics express 2016-09, Vol.9 (9), p.92101
Hauptverfasser:	Lin, Yue, Peng, Zhangbao, Zhu, Lihong, Yan, Wei, Shih, Tien-mo, Wu, Tingzhu, Lu, Yijun, Gao, Yulin, Chen, Zhong, Guo, Ziquan, Liu, Zhuguang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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