Uniform bipolar resistive switching behaviors in BiFeO3 thin films on Fe-doped LaNiO3 electrodes

Uniform bipolar resistive switching behaviors in BiFeO3 thin films on Fe-doped LaNiO3 electrodes

The uniform bipolar resistive switching effect has been observed in Pt/BiFeO3/LaNi0.95Fe0.05O3/Si structures. The use of Fe doped LaNiO3 as electrodes can improve the resistive switching performance of Pt/BiFeO3/LaNi0.95Fe0.05O3/Si devices, such as lower operating voltages and power consumption. Suc...

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Veröffentlicht in:Applied physics express 2014-08, Vol.7 (9)
Hauptverfasser: Chen, Ruqi, Lao, Meimei, Xu, Jun, Xu, Chudong
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Lao, Meimei
Xu, Jun
Xu, Chudong
description The uniform bipolar resistive switching effect has been observed in Pt/BiFeO3/LaNi0.95Fe0.05O3/Si structures. The use of Fe doped LaNiO3 as electrodes can improve the resistive switching performance of Pt/BiFeO3/LaNi0.95Fe0.05O3/Si devices, such as lower operating voltages and power consumption. Such devices also exhibit stable bipolar resistive switching characteristics with a resistance ratio of about 20 and a retention time of 103 s. On the basis of the current-voltage characteristics, the dominant conduction mechanisms were inferred to be ohmic conduction in the low-resistance state and Schottky emission in the high-resistance state. The conducting filament-related model has been proposed to explain the physical mechanism underlying the bipolar resistive switching behavior in terms of the migration of oxygen vacancies.
doi_str_mv 10.7567/APEX.7.095801
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The use of Fe doped LaNiO3 as electrodes can improve the resistive switching performance of Pt/BiFeO3/LaNi0.95Fe0.05O3/Si devices, such as lower operating voltages and power consumption. Such devices also exhibit stable bipolar resistive switching characteristics with a resistance ratio of about 20 and a retention time of 103 s. On the basis of the current-voltage characteristics, the dominant conduction mechanisms were inferred to be ohmic conduction in the low-resistance state and Schottky emission in the high-resistance state. 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title Uniform bipolar resistive switching behaviors in BiFeO3 thin films on Fe-doped LaNiO3 electrodes
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