Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

In this study, we investigated the effects of postmetallization annealing (PMA) on the interface properties of GaN metal-oxide-semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition. Excellent capacitance-voltage (C-V) characteristics without frequency dispersion were observe...

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Veröffentlicht in:	Applied physics express 2018-12, Vol.11 (12)
Hauptverfasser:	Hashizume, Tamotsu, Kaneki, Shota, Oyobiki, Tatsuya, Ando, Yuji, Sasaki, Shota, Nishiguchi, Kenya
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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