Low-hole concentration polycrystalline germanium by CO2 laser annealing for the fabrication of an enhancement-mode nMOSFET

Low-hole concentration polycrystalline germanium by CO2 laser annealing for the fabrication of an enhancement-mode nMOSFET

A p-type polycrystalline Ge (poly-Ge) film processed by UV and CO2 laser annealing reduces the hole concentration from 6 × 1018 to 2 × 1016 cm−3, accompanied by poly-grain growth. The decrease in hole concentration arises from the defect annealing using a CO2 laser, as demonstrated by the changes in...

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Veröffentlicht in:Applied physics express 2018-10, Vol.11 (10)
Hauptverfasser: Kasirajan, Hari Anand, Huang, Wen-Hsien, Kao, Ming-Hsuan, Wang, Hsing-Hsiang, Shieh, Jia-Min, Pan, Fu-Ming, Shen, Chang-Hong
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container_title Applied physics express
container_volume 11
creator Kasirajan, Hari Anand
Huang, Wen-Hsien
Kao, Ming-Hsuan
Wang, Hsing-Hsiang
Shieh, Jia-Min
Pan, Fu-Ming
Shen, Chang-Hong
description A p-type polycrystalline Ge (poly-Ge) film processed by UV and CO2 laser annealing reduces the hole concentration from 6 × 1018 to 2 × 1016 cm−3, accompanied by poly-grain growth. The decrease in hole concentration arises from the defect annealing using a CO2 laser, as demonstrated by the changes in the work function, that is, the valence-band maximum (VBM). The laser processes reduce the thermal budget for the fabrication of an enhancement-mode poly-Ge nMOSFET, which has a Ion/Ioff ratio of 5 × 103, a Vth of 2 V, and a subthreshold swing of 250 mV/dec., and will be potential fabrication methods for monolithic 3D integrated circuits in the future.
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title Low-hole concentration polycrystalline germanium by CO2 laser annealing for the fabrication of an enhancement-mode nMOSFET
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