Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes

Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current-voltage characteristic and elec...

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Veröffentlicht in:	Applied physics express 2018-07, Vol.11 (7), p.75103
Hauptverfasser:	Huang, Chun-Ying, Hsu, Fu-Fan, Wu, Chia-Ling, Chen, Ming-Liang, Tsai, Ping-Hung, Tong, Sian-Rong, Yeh, Ting-Wei, Lee, Ya-Ju
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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