Evaluation of femtosecond laser-scribed Cu(In,Ga)Se2 solar cells using scanning spreading resistance microscopy
The effect of laser-induced heat on Cu(In,Ga)Se2 solar cells was evaluated by scanning spreading resistance microscopy (SSRM) to improve the laser scribing (LS) quality. Two types of LS were examined for electrical isolation; that using transparent conductive oxide (TCO) lift-off resulted in a highe...
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| Veröffentlicht in: | Applied physics express 2018-02, Vol.11 (3) |
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| creator | Narazaki, Aiko Nishinaga, Jiro Takada, Hideyuki Sato, Tadatake Niino, Hiroyuki Torizuka, Kenji Kamikawa-Shimizu, Yukiko Ishizuka, Shogo Shibata, Hajime Niki, Shigeru |
| description | The effect of laser-induced heat on Cu(In,Ga)Se2 solar cells was evaluated by scanning spreading resistance microscopy (SSRM) to improve the laser scribing (LS) quality. Two types of LS were examined for electrical isolation; that using transparent conductive oxide (TCO) lift-off resulted in a higher conversion efficiency of 17.4% and shunt resistance of 5 × 103 Ω·cm2. SSRM images confirmed the absence of shunt paths between the laser-induced low-resistance layer at the trench bottom and the top TCO layer, which resulted in the high shunt resistance. Ultrashort-pulse LS would be a promising tool for reducing the dead area and increasing the throughput by high-speed scribing. |
| doi_str_mv | 10.7567/APEX.11.032301 |
| format | Article |
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Two types of LS were examined for electrical isolation; that using transparent conductive oxide (TCO) lift-off resulted in a higher conversion efficiency of 17.4% and shunt resistance of 5 × 103 Ω·cm2. SSRM images confirmed the absence of shunt paths between the laser-induced low-resistance layer at the trench bottom and the top TCO layer, which resulted in the high shunt resistance. 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Phys. Express</addtitle><date>2018-02-06</date><risdate>2018</risdate><volume>11</volume><issue>3</issue><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>The effect of laser-induced heat on Cu(In,Ga)Se2 solar cells was evaluated by scanning spreading resistance microscopy (SSRM) to improve the laser scribing (LS) quality. Two types of LS were examined for electrical isolation; that using transparent conductive oxide (TCO) lift-off resulted in a higher conversion efficiency of 17.4% and shunt resistance of 5 × 103 Ω·cm2. SSRM images confirmed the absence of shunt paths between the laser-induced low-resistance layer at the trench bottom and the top TCO layer, which resulted in the high shunt resistance. Ultrashort-pulse LS would be a promising tool for reducing the dead area and increasing the throughput by high-speed scribing.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/APEX.11.032301</doi><tpages>4</tpages></addata></record> |
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| title | Evaluation of femtosecond laser-scribed Cu(In,Ga)Se2 solar cells using scanning spreading resistance microscopy |
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