Theoretical study on high-frequency graphene-nanoribbon heterojunction backward diode

Theoretical study on high-frequency graphene-nanoribbon heterojunction backward diode

We propose and analyze a heterojunction backward diode for millimeter- or terahertz-wave detection using edge-modified graphene nanoribbons (GNRs). According to the electron-affinity difference between a hydrogen-terminated GNR and a fluorine-terminated GNR, it is possible to construct a staggered-t...

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Veröffentlicht in:Applied physics express 2017-07, Vol.10 (7), p.74001
Hauptverfasser: Harada, Naoki, Jippo, Hideyuki, Sato, Shintaro
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Jippo, Hideyuki
Sato, Shintaro
description We propose and analyze a heterojunction backward diode for millimeter- or terahertz-wave detection using edge-modified graphene nanoribbons (GNRs). According to the electron-affinity difference between a hydrogen-terminated GNR and a fluorine-terminated GNR, it is possible to construct a staggered-type lateral heterojunction diode. First-principles calculations reveal that because of band-to-band tunneling, the diode has a nonlinear current of the order of kA/m. The small junction area contributes to the reduction of the intrinsic junction capacitance. Equivalent-circuit analyses show that when the total capacitance is reduced below 100 aF, the diode exhibits a voltage sensitivity of 3.79 × 103 V/W at 300 GHz.
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title Theoretical study on high-frequency graphene-nanoribbon heterojunction backward diode
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