Coexistence of bipolar non-volatile and threshold volatile resistive switching in MoS2 nanosheets treated by soft nitrogen plasma

Coexistence of non-volatile and volatile resistive switching on the same device are of interest in memory devices for weight storage applications. In this work, stacked MoS2 nanosheet thin film was modified using soft nitrogen plasma treatment (NPT). Compared to pristine MoS2-based counterparts, the...

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Veröffentlicht in:	Applied physics express 2019-12, Vol.12 (12)
Hauptverfasser:	Ke, Yizhen, Zhang, Zidong, Guo, Junxiong, Mao, Linna, Cheng, Tiedong, Zhou, Haiping, Lin, Yuan, Gong, Tianxun, Huang, Wen, Zhang, Xiaosheng
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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