CoFeB/MgO/CoFeB magnetic tunnel junctions prepared by layer-by-layer growth of naturally oxidized MgO

CoFeB/MgO/CoFeB magnetic tunnel junctions prepared by layer-by-layer growth of naturally oxidized MgO

We fabricated CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by naturally oxidizing dc-sputtered Mg and investigated the formation process of MgO(001) by reflective high-energy diffraction. The 0.26 nm thick Mg layer on amorphous CoFe(B) had an amorphous structure in the as-deposited state and a m...

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Veröffentlicht in:Applied physics express 2019-10, Vol.12 (10), p.103003
Hauptverfasser: Konoto, Makoto, Murayama, Akiyuki, Ochiai, Takao, Amano, Minoru, Yakushiji, Kay, Kubota, Hitoshi, Yuasa, Shinji
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container_issue 10
container_start_page 103003
container_title Applied physics express
container_volume 12
creator Konoto, Makoto
Murayama, Akiyuki
Ochiai, Takao
Amano, Minoru
Yakushiji, Kay
Kubota, Hitoshi
Yuasa, Shinji
description We fabricated CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by naturally oxidizing dc-sputtered Mg and investigated the formation process of MgO(001) by reflective high-energy diffraction. The 0.26 nm thick Mg layer on amorphous CoFe(B) had an amorphous structure in the as-deposited state and a monolayer (ML) of textured MgO(001) formed by natural oxidation. By repeating the deposition/oxidation of 0.26 nm thick Mg layers, a highly textured MgO(001) barrier layer was prepared. Surprisingly, (001)-oriented crystallization was confirmed even for 2 ML thick MgO. The MTJs prepared by layer-by-layer growth of naturally oxidized MgO exhibited high MR ratios (up to 200%) and low resistance-area products suited for device applications.
doi_str_mv 10.7567/1882-0786/ab3e55
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title CoFeB/MgO/CoFeB magnetic tunnel junctions prepared by layer-by-layer growth of naturally oxidized MgO
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