Coulomb-blockade transport in selectively-doped Si nano-transistors

Coulomb-blockade transport in selectively-doped Si nano-transistors

Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-d...

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Veröffentlicht in:Applied physics express 2019-08, Vol.12 (8), p.85004
Hauptverfasser: Afiff, Adnan, Samanta, Arup, Udhiarto, Arief, Sudibyo, Harry, Hori, Masahiro, Ono, Yukinori, Tabe, Michiharu, Moraru, Daniel
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Coulomb blockade
multiple-donor cluster
selectively-doped SOI-FET
Si nano-transistor
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container_issue 8
container_start_page 85004
container_title Applied physics express
container_volume 12
creator Afiff, Adnan
Samanta, Arup
Udhiarto, Arief
Sudibyo, Harry
Hori, Masahiro
Ono, Yukinori
Tabe, Michiharu
Moraru, Daniel
description Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-doping, as observed from Coulomb-blockade transport at low temperature (T = 5.5 K). While at high gate voltage electron tunneling takes place via extended QDs, likely due to line edge roughness of the nanoscale channel, at low gate voltage tunneling occurs via a cluster of intentionally-doped donors. For the interpretation, we introduce a model of an isolated donor-cluster as a QD with voltage-dependent tunnel resistances.
doi_str_mv 10.7567/1882-0786/ab2cd7
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subjects Coulomb blockade
multiple-donor cluster
selectively-doped SOI-FET
Si nano-transistor
title Coulomb-blockade transport in selectively-doped Si nano-transistors
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