Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector
We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W−1 and noise equivale...
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| Veröffentlicht in: | Applied physics express 2019-05, Vol.12 (5), p.52013 |
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| container_issue | 5 |
| container_start_page | 52013 |
| container_title | Applied physics express |
| container_volume | 12 |
| creator | Wu, Caiyang Zhou, Wei Yao, Niangjuan Xu, Xinyue Qu, Yue Zhang, Zhibo Wu, Jing Jiang, Lin Huang, Zhiming Chu, Junhao |
| description | We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W−1 and noise equivalent power (NEP) of 0.38 pW H z − 1 2 at 20-40 GHz, and achieved a responsivity of 3.3 kV W−1 and NEP of 5.7 pW H z − 1 2 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays. |
| doi_str_mv | 10.7567/1882-0786/ab14fc |
| format | Article |
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The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W−1 and noise equivalent power (NEP) of 0.38 pW H z − 1 2 at 20-40 GHz, and achieved a responsivity of 3.3 kV W−1 and NEP of 5.7 pW H z − 1 2 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/1882-0786/ab14fc</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Photoconductive ; photoelectric detection ; Si-based ; SOI ; sub-terahertz</subject><ispartof>Applied physics express, 2019-05, Vol.12 (5), p.52013</ispartof><rights>2019 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-d0e28366ab42941db73836ff0dd01460824b326c8b2cd4f3e4d62c7016379d743</citedby><cites>FETCH-LOGICAL-c379t-d0e28366ab42941db73836ff0dd01460824b326c8b2cd4f3e4d62c7016379d743</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1882-0786/ab14fc/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Wu, Caiyang</creatorcontrib><creatorcontrib>Zhou, Wei</creatorcontrib><creatorcontrib>Yao, Niangjuan</creatorcontrib><creatorcontrib>Xu, Xinyue</creatorcontrib><creatorcontrib>Qu, Yue</creatorcontrib><creatorcontrib>Zhang, Zhibo</creatorcontrib><creatorcontrib>Wu, Jing</creatorcontrib><creatorcontrib>Jiang, Lin</creatorcontrib><creatorcontrib>Huang, Zhiming</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><title>Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W−1 and noise equivalent power (NEP) of 0.38 pW H z − 1 2 at 20-40 GHz, and achieved a responsivity of 3.3 kV W−1 and NEP of 5.7 pW H z − 1 2 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.</description><subject>Photoconductive</subject><subject>photoelectric detection</subject><subject>Si-based</subject><subject>SOI</subject><subject>sub-terahertz</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1UEtLAzEYDKJgrd495ujBtXk12R6l-IKCBxWPIZuHTeluliRbrb_elEpPevpeM8N8A8AlRjdiysUE1zWpkKj5RDWYOX0ERofV8aEX9Sk4S2mFEGcU8xF4f_Frr0NXNSpZA5f-YwmT7ZLPfuPzFgYHYwhtlW3b26jyEC1svY7hU20sVJ2BaWjKNaqljfkbGputziGegxOn1sle_NYxeLu_e50_Vovnh6f57aLSVMxyZZAlNeVcNYzMGDaNoGV0DhmDMOOoJqyhhOu6IdowRy0znGiBMC90IxgdA7TXLZZSitbJPvpWxa3ESO6CkbvP5S4FuQ-mUK72FB96uQpD7IpBqXr7JTGRU4mmBGEqe-MK9PoP6L_KPwOLc9c</recordid><startdate>20190501</startdate><enddate>20190501</enddate><creator>Wu, Caiyang</creator><creator>Zhou, Wei</creator><creator>Yao, Niangjuan</creator><creator>Xu, Xinyue</creator><creator>Qu, Yue</creator><creator>Zhang, Zhibo</creator><creator>Wu, Jing</creator><creator>Jiang, Lin</creator><creator>Huang, Zhiming</creator><creator>Chu, Junhao</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20190501</creationdate><title>Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector</title><author>Wu, Caiyang ; Zhou, Wei ; Yao, Niangjuan ; Xu, Xinyue ; Qu, Yue ; Zhang, Zhibo ; Wu, Jing ; Jiang, Lin ; Huang, Zhiming ; Chu, Junhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-d0e28366ab42941db73836ff0dd01460824b326c8b2cd4f3e4d62c7016379d743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Photoconductive</topic><topic>photoelectric detection</topic><topic>Si-based</topic><topic>SOI</topic><topic>sub-terahertz</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Caiyang</creatorcontrib><creatorcontrib>Zhou, Wei</creatorcontrib><creatorcontrib>Yao, Niangjuan</creatorcontrib><creatorcontrib>Xu, Xinyue</creatorcontrib><creatorcontrib>Qu, Yue</creatorcontrib><creatorcontrib>Zhang, Zhibo</creatorcontrib><creatorcontrib>Wu, Jing</creatorcontrib><creatorcontrib>Jiang, Lin</creatorcontrib><creatorcontrib>Huang, Zhiming</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Caiyang</au><au>Zhou, Wei</au><au>Yao, Niangjuan</au><au>Xu, Xinyue</au><au>Qu, Yue</au><au>Zhang, Zhibo</au><au>Wu, Jing</au><au>Jiang, Lin</au><au>Huang, Zhiming</au><au>Chu, Junhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2019-05-01</date><risdate>2019</risdate><volume>12</volume><issue>5</issue><spage>52013</spage><pages>52013-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W−1 and noise equivalent power (NEP) of 0.38 pW H z − 1 2 at 20-40 GHz, and achieved a responsivity of 3.3 kV W−1 and NEP of 5.7 pW H z − 1 2 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.</abstract><pub>IOP Publishing</pub><doi>10.7567/1882-0786/ab14fc</doi><tpages>5</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Photoconductive photoelectric detection Si-based SOI sub-terahertz |
| title | Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector |
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