Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications
The optical properties of transition-metal-based ternary tellurides have been systematically examined by density functional theory simulations. Based on an empirical law, which correlates density change with the optical contrast between the amorphous and crystalline phases of chalcogenides, the dens...
Gespeichert in:
| Veröffentlicht in: | Applied physics express 2019-05, Vol.12 (5), p.51008 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 5 |
| container_start_page | 51008 |
| container_title | Applied physics express |
| container_volume | 12 |
| creator | Saito, Yuta Hatayama, Shogo Shuang, Yi Shindo, Satoshi Fons, Paul Kolobov, Alexander V. Kobayashi, Keisuke Sutou, Yuji |
| description | The optical properties of transition-metal-based ternary tellurides have been systematically examined by density functional theory simulations. Based on an empirical law, which correlates density change with the optical contrast between the amorphous and crystalline phases of chalcogenides, the density changes occurring upon crystallization for hypothetical materials have been predicted. Cr2Ge2Te6 was found theoretically to be one of the best materials for phase-change memory applications owing to its small density change. This novel criterion will be useful in the screening of materials yet to be experimentally realized, and will help target promising materials for high-endurance phase-change memory applications. |
| doi_str_mv | 10.7567/1882-0786/ab1301 |
| format | Article |
| fullrecord | <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_7567_1882_0786_ab1301</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apexab1301</sourcerecordid><originalsourceid>FETCH-LOGICAL-c313t-57feb5affd6954c05d92df258f2048fdf99ed44f7c4c44dd8dc83069b649e9f03</originalsourceid><addsrcrecordid>eNp9ULtOwzAUtRBIlMLO6JEBUzuxE2dEFS-pEgMwW64fjavEjuwUyMqXkxLUCbHce3V0HlcHgEuCb0pWlAvCeYZwyYuFXJMckyMwO0DHh7vkp-AspS3GBc1JMQNfL0PqTSt7p-A4TXSySVCb5DYe2hBhV8tkkKql3xjYmjbEAX64voaplU0zMn1y_QAnQvqR1G5TI-P1LkqvDPTBo_fQjBHNwUF2XePUCAWfzsGJHUPNxe-eg7f7u9flI1o9Pzwtb1dI5STvESutWTNprS4qRhVmusq0zRi3GabcaltVRlNqS0UVpVpzrXiOi2pd0MpUFudzgCdfFUNK0VjRRdfKOAiCxb5DsS9J7AsTU4ej5HqSuNCJbdhFPz74H_3qD7rszKcgmWACM4IxF522-Tek3oRc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Saito, Yuta ; Hatayama, Shogo ; Shuang, Yi ; Shindo, Satoshi ; Fons, Paul ; Kolobov, Alexander V. ; Kobayashi, Keisuke ; Sutou, Yuji</creator><creatorcontrib>Saito, Yuta ; Hatayama, Shogo ; Shuang, Yi ; Shindo, Satoshi ; Fons, Paul ; Kolobov, Alexander V. ; Kobayashi, Keisuke ; Sutou, Yuji</creatorcontrib><description>The optical properties of transition-metal-based ternary tellurides have been systematically examined by density functional theory simulations. Based on an empirical law, which correlates density change with the optical contrast between the amorphous and crystalline phases of chalcogenides, the density changes occurring upon crystallization for hypothetical materials have been predicted. Cr2Ge2Te6 was found theoretically to be one of the best materials for phase-change memory applications owing to its small density change. This novel criterion will be useful in the screening of materials yet to be experimentally realized, and will help target promising materials for high-endurance phase-change memory applications.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/1882-0786/ab1301</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><ispartof>Applied physics express, 2019-05, Vol.12 (5), p.51008</ispartof><rights>2019 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c313t-57feb5affd6954c05d92df258f2048fdf99ed44f7c4c44dd8dc83069b649e9f03</citedby><cites>FETCH-LOGICAL-c313t-57feb5affd6954c05d92df258f2048fdf99ed44f7c4c44dd8dc83069b649e9f03</cites><orcidid>0000-0002-2914-1072 ; 0000-0002-3067-2727 ; 0000-0002-9576-1560 ; 0000-0002-7820-1924 ; 0000-0002-8125-1172</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1882-0786/ab1301/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27923,27924,53845,53892</link.rule.ids></links><search><creatorcontrib>Saito, Yuta</creatorcontrib><creatorcontrib>Hatayama, Shogo</creatorcontrib><creatorcontrib>Shuang, Yi</creatorcontrib><creatorcontrib>Shindo, Satoshi</creatorcontrib><creatorcontrib>Fons, Paul</creatorcontrib><creatorcontrib>Kolobov, Alexander V.</creatorcontrib><creatorcontrib>Kobayashi, Keisuke</creatorcontrib><creatorcontrib>Sutou, Yuji</creatorcontrib><title>Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>The optical properties of transition-metal-based ternary tellurides have been systematically examined by density functional theory simulations. Based on an empirical law, which correlates density change with the optical contrast between the amorphous and crystalline phases of chalcogenides, the density changes occurring upon crystallization for hypothetical materials have been predicted. Cr2Ge2Te6 was found theoretically to be one of the best materials for phase-change memory applications owing to its small density change. This novel criterion will be useful in the screening of materials yet to be experimentally realized, and will help target promising materials for high-endurance phase-change memory applications.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9ULtOwzAUtRBIlMLO6JEBUzuxE2dEFS-pEgMwW64fjavEjuwUyMqXkxLUCbHce3V0HlcHgEuCb0pWlAvCeYZwyYuFXJMckyMwO0DHh7vkp-AspS3GBc1JMQNfL0PqTSt7p-A4TXSySVCb5DYe2hBhV8tkkKql3xjYmjbEAX64voaplU0zMn1y_QAnQvqR1G5TI-P1LkqvDPTBo_fQjBHNwUF2XePUCAWfzsGJHUPNxe-eg7f7u9flI1o9Pzwtb1dI5STvESutWTNprS4qRhVmusq0zRi3GabcaltVRlNqS0UVpVpzrXiOi2pd0MpUFudzgCdfFUNK0VjRRdfKOAiCxb5DsS9J7AsTU4ej5HqSuNCJbdhFPz74H_3qD7rszKcgmWACM4IxF522-Tek3oRc</recordid><startdate>20190501</startdate><enddate>20190501</enddate><creator>Saito, Yuta</creator><creator>Hatayama, Shogo</creator><creator>Shuang, Yi</creator><creator>Shindo, Satoshi</creator><creator>Fons, Paul</creator><creator>Kolobov, Alexander V.</creator><creator>Kobayashi, Keisuke</creator><creator>Sutou, Yuji</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-2914-1072</orcidid><orcidid>https://orcid.org/0000-0002-3067-2727</orcidid><orcidid>https://orcid.org/0000-0002-9576-1560</orcidid><orcidid>https://orcid.org/0000-0002-7820-1924</orcidid><orcidid>https://orcid.org/0000-0002-8125-1172</orcidid></search><sort><creationdate>20190501</creationdate><title>Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications</title><author>Saito, Yuta ; Hatayama, Shogo ; Shuang, Yi ; Shindo, Satoshi ; Fons, Paul ; Kolobov, Alexander V. ; Kobayashi, Keisuke ; Sutou, Yuji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-57feb5affd6954c05d92df258f2048fdf99ed44f7c4c44dd8dc83069b649e9f03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saito, Yuta</creatorcontrib><creatorcontrib>Hatayama, Shogo</creatorcontrib><creatorcontrib>Shuang, Yi</creatorcontrib><creatorcontrib>Shindo, Satoshi</creatorcontrib><creatorcontrib>Fons, Paul</creatorcontrib><creatorcontrib>Kolobov, Alexander V.</creatorcontrib><creatorcontrib>Kobayashi, Keisuke</creatorcontrib><creatorcontrib>Sutou, Yuji</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saito, Yuta</au><au>Hatayama, Shogo</au><au>Shuang, Yi</au><au>Shindo, Satoshi</au><au>Fons, Paul</au><au>Kolobov, Alexander V.</au><au>Kobayashi, Keisuke</au><au>Sutou, Yuji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2019-05-01</date><risdate>2019</risdate><volume>12</volume><issue>5</issue><spage>51008</spage><pages>51008-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>The optical properties of transition-metal-based ternary tellurides have been systematically examined by density functional theory simulations. Based on an empirical law, which correlates density change with the optical contrast between the amorphous and crystalline phases of chalcogenides, the density changes occurring upon crystallization for hypothetical materials have been predicted. Cr2Ge2Te6 was found theoretically to be one of the best materials for phase-change memory applications owing to its small density change. This novel criterion will be useful in the screening of materials yet to be experimentally realized, and will help target promising materials for high-endurance phase-change memory applications.</abstract><pub>IOP Publishing</pub><doi>10.7567/1882-0786/ab1301</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2914-1072</orcidid><orcidid>https://orcid.org/0000-0002-3067-2727</orcidid><orcidid>https://orcid.org/0000-0002-9576-1560</orcidid><orcidid>https://orcid.org/0000-0002-7820-1924</orcidid><orcidid>https://orcid.org/0000-0002-8125-1172</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1882-0778 |
| ispartof | Applied physics express, 2019-05, Vol.12 (5), p.51008 |
| issn | 1882-0778 1882-0786 |
| language | eng |
| recordid | cdi_iop_journals_10_7567_1882_0786_ab1301 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T00%3A41%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Systematic%20materials%20design%20for%20phase-change%20memory%20with%20small%20density%20changes%20for%20high-endurance%20non-volatile%20memory%20applications&rft.jtitle=Applied%20physics%20express&rft.au=Saito,%20Yuta&rft.date=2019-05-01&rft.volume=12&rft.issue=5&rft.spage=51008&rft.pages=51008-&rft.issn=1882-0778&rft.eissn=1882-0786&rft.coden=APEPC4&rft_id=info:doi/10.7567/1882-0786/ab1301&rft_dat=%3Ciop_cross%3Eapexab1301%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |