Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer
Pyramidal inversion domains (PIDs) with (0001) bases several nanometers wide are commonly observed in highly Mg-doped GaN epitaxial layers. High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on previously proposed Mg segreg...
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| Veröffentlicht in: | Applied physics express 2019-03, Vol.12 (3), p.31004 |
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| container_title | Applied physics express |
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| creator | Iwata, Kenji Narita, Tetsuo Nagao, Masahiro Tomita, Kazuyoshi Kataoka, Keita Kachi, Tetsu Ikarashi, Nobuyuki |
| description | Pyramidal inversion domains (PIDs) with (0001) bases several nanometers wide are commonly observed in highly Mg-doped GaN epitaxial layers. High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on previously proposed Mg segregation models: Mg atoms segregate to form a single atomic layer at the boundary and substitute 1/4 of Ga atoms in the neighboring Ga layers. We explain that the Mg segregation produces electrically inactive Mg atoms and can be a cause of the free carrier reduction in the highly Mg-doped GaN. The PID formation process during the epitaxial growth is also discussed. |
| doi_str_mv | 10.7567/1882-0786/ab04f1 |
| format | Article |
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High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on previously proposed Mg segregation models: Mg atoms segregate to form a single atomic layer at the boundary and substitute 1/4 of Ga atoms in the neighboring Ga layers. We explain that the Mg segregation produces electrically inactive Mg atoms and can be a cause of the free carrier reduction in the highly Mg-doped GaN. 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Phys. Express</addtitle><description>Pyramidal inversion domains (PIDs) with (0001) bases several nanometers wide are commonly observed in highly Mg-doped GaN epitaxial layers. High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on previously proposed Mg segregation models: Mg atoms segregate to form a single atomic layer at the boundary and substitute 1/4 of Ga atoms in the neighboring Ga layers. We explain that the Mg segregation produces electrically inactive Mg atoms and can be a cause of the free carrier reduction in the highly Mg-doped GaN. 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Phys. Express</addtitle><date>2019-03-01</date><risdate>2019</risdate><volume>12</volume><issue>3</issue><spage>31004</spage><pages>31004-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>Pyramidal inversion domains (PIDs) with (0001) bases several nanometers wide are commonly observed in highly Mg-doped GaN epitaxial layers. High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on previously proposed Mg segregation models: Mg atoms segregate to form a single atomic layer at the boundary and substitute 1/4 of Ga atoms in the neighboring Ga layers. We explain that the Mg segregation produces electrically inactive Mg atoms and can be a cause of the free carrier reduction in the highly Mg-doped GaN. 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| title | Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer |
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