Stress engineering on the electronic and spintronic properties for a GaSe/HfSe2 van der Waals heterostructure

Stress engineering on the electronic and spintronic properties for a GaSe/HfSe2 van der Waals heterostructure

In this work, the electronic and spintronic properties of GaSe/HfSe2 heterostructure under different strains are investigated through first-principles calculations. The results indicate that GaSe/HfSe2 heterostructure has an intrinsic type I band alignment, and the band structure is sensitive to the...

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Veröffentlicht in:Applied physics express 2019-03, Vol.12 (3)
Hauptverfasser: Ke, Congming, Tang, Weiqing, Zhou, Jiangpeng, Wu, Zhiming, Li, Xu, Zhang, Chunmiao, Wu, Yaping, Yang, Weihuang, Kang, Junyong
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band alignment
first-principles calculations
GaSe/HfSe
heterostructure
spin-orbital coupling
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container_issue 3
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container_title Applied physics express
container_volume 12
creator Ke, Congming
Tang, Weiqing
Zhou, Jiangpeng
Wu, Zhiming
Li, Xu
Zhang, Chunmiao
Wu, Yaping
Yang, Weihuang
Kang, Junyong
description In this work, the electronic and spintronic properties of GaSe/HfSe2 heterostructure under different strains are investigated through first-principles calculations. The results indicate that GaSe/HfSe2 heterostructure has an intrinsic type I band alignment, and the band structure is sensitive to the strain. A transition from type-I to type-II band alignment is found under a tensile stress. The evolution of the band structures is analyzed by the decomposed-projected band structures. Moreover, switchable spin textures of GaSe/HfSe2 heterostructure with different strains are also predicted. The controllable electronic spintronic properties of GaSe/HfSe2 heterostructure hold a great promise in applications of nanoelectronics and spintronics.
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subjects band alignment
first-principles calculations
GaSe/HfSe
heterostructure
spin-orbital coupling
title Stress engineering on the electronic and spintronic properties for a GaSe/HfSe2 van der Waals heterostructure
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