Annihilation mechanism of V-shaped pits in c-GaN grown by hydride vapor-phase epitaxy

An evident issue in performing GaN growth along the c-direction is the generation of V-shaped pits on its surface. Here, we investigated the transition of the angle of facets forming a V-shaped pit via three-photon excitation photoluminescence (3PPL). The intermittent doping of Ge was introduced to...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SC1011
Hauptverfasser:	Iso, Kenji, Ikeda, Hirotaka, Gouda, Riki, Mochizuki, Tae, Izumisawa, Satoru
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier gases Epitaxial growth Photoluminescence Pits Vapor phase epitaxy
Online-Zugang:	Volltext
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