Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate
We demonstrated epitaxial growth of magnesium oxide (MgO) on a silicon (Si) substrate with cubic on cubic structure [MgO(001)//Si(001) and MgO(100)//Si(100)]. Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressur...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2019-02, Vol.58 (SA), p.SAAD06 |
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| container_issue | SA |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 58 |
| creator | Kaneko, Satoru Tokumasu, Takashi Nakamaru, Yoshimi Kokubun, Chiemi Konda, Kayoko Yasui, Manabu Kurouchi, Masahito Can, Musa Shawuti, Shalima Sudo, Rieko Endo, Tamio Yasuhara, Shigeo Matsuda, Akifumi Yoshimoto, Mamoru |
| description | We demonstrated epitaxial growth of magnesium oxide (MgO) on a silicon (Si) substrate with cubic on cubic structure [MgO(001)//Si(001) and MgO(100)//Si(100)]. Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressure and substrate temperature, the lattice constants of MgO decreased along both the surface normal and in-plane directions. To support the facts of (1) constriction of lattice constants and (2) cubic on cubic growth, we show (1) optimal lattice constants with defects in the crystal structure, (2) domain mismatch between MgO and Si instead of lattice mismatch, and (3) stability of MgO crystals on the surface of the Si substrate. |
| doi_str_mv | 10.7567/1347-4065/aaec11 |
| format | Article |
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Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressure and substrate temperature, the lattice constants of MgO decreased along both the surface normal and in-plane directions. To support the facts of (1) constriction of lattice constants and (2) cubic on cubic growth, we show (1) optimal lattice constants with defects in the crystal structure, (2) domain mismatch between MgO and Si instead of lattice mismatch, and (3) stability of MgO crystals on the surface of the Si substrate.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/1347-4065/aaec11</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>IOP Publishing</publisher><ispartof>Japanese Journal of Applied Physics, 2019-02, Vol.58 (SA), p.SAAD06</ispartof><rights>2018 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-69d58fab80c609d4258aade540f9ff883d513557da3f4d46b715c10772fe80143</citedby><cites>FETCH-LOGICAL-c346t-69d58fab80c609d4258aade540f9ff883d513557da3f4d46b715c10772fe80143</cites><orcidid>0000-0003-0823-1666</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1347-4065/aaec11/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Kaneko, Satoru</creatorcontrib><creatorcontrib>Tokumasu, Takashi</creatorcontrib><creatorcontrib>Nakamaru, Yoshimi</creatorcontrib><creatorcontrib>Kokubun, Chiemi</creatorcontrib><creatorcontrib>Konda, Kayoko</creatorcontrib><creatorcontrib>Yasui, Manabu</creatorcontrib><creatorcontrib>Kurouchi, Masahito</creatorcontrib><creatorcontrib>Can, Musa</creatorcontrib><creatorcontrib>Shawuti, Shalima</creatorcontrib><creatorcontrib>Sudo, Rieko</creatorcontrib><creatorcontrib>Endo, Tamio</creatorcontrib><creatorcontrib>Yasuhara, Shigeo</creatorcontrib><creatorcontrib>Matsuda, Akifumi</creatorcontrib><creatorcontrib>Yoshimoto, Mamoru</creatorcontrib><title>Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We demonstrated epitaxial growth of magnesium oxide (MgO) on a silicon (Si) substrate with cubic on cubic structure [MgO(001)//Si(001) and MgO(100)//Si(100)]. Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressure and substrate temperature, the lattice constants of MgO decreased along both the surface normal and in-plane directions. To support the facts of (1) constriction of lattice constants and (2) cubic on cubic growth, we show (1) optimal lattice constants with defects in the crystal structure, (2) domain mismatch between MgO and Si instead of lattice mismatch, and (3) stability of MgO crystals on the surface of the Si substrate.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKxDAUhoMoOI7uXZ4HsE7S5tIuZfAGA250Hc7kohnapjQpjG9vy4g7V4dz-T8OHyG3jN4rIdWGVVwVnEqxQXSGsTOy-hudkxWlJSt4U5aX5Cqlw9xKwdmKfG1jn_IYTA6xh-gBocWcg3Fglg32GUIP2IMbQsZjwBY6_OxdClMH8RisAx_aDqwbYgrZWZg5CCm0YQZAmvYzHrO7Jhce2-RufuuafDw9vm9fit3b8-v2YVeYistcyMaK2uO-pkbSxvJS1IjWCU59431dV1awSghlsfLccrlXTBhGlSq9qynj1ZrQE9eMMaXReT2MocPxWzOqF1N60aIXLfpkao7cnSIhDvoQp7GfH_z__AcnZGwT</recordid><startdate>20190201</startdate><enddate>20190201</enddate><creator>Kaneko, Satoru</creator><creator>Tokumasu, Takashi</creator><creator>Nakamaru, Yoshimi</creator><creator>Kokubun, Chiemi</creator><creator>Konda, Kayoko</creator><creator>Yasui, Manabu</creator><creator>Kurouchi, Masahito</creator><creator>Can, Musa</creator><creator>Shawuti, Shalima</creator><creator>Sudo, Rieko</creator><creator>Endo, Tamio</creator><creator>Yasuhara, Shigeo</creator><creator>Matsuda, Akifumi</creator><creator>Yoshimoto, Mamoru</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0823-1666</orcidid></search><sort><creationdate>20190201</creationdate><title>Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate</title><author>Kaneko, Satoru ; Tokumasu, Takashi ; Nakamaru, Yoshimi ; Kokubun, Chiemi ; Konda, Kayoko ; Yasui, Manabu ; Kurouchi, Masahito ; Can, Musa ; Shawuti, Shalima ; Sudo, Rieko ; Endo, Tamio ; Yasuhara, Shigeo ; Matsuda, Akifumi ; Yoshimoto, Mamoru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-69d58fab80c609d4258aade540f9ff883d513557da3f4d46b715c10772fe80143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kaneko, Satoru</creatorcontrib><creatorcontrib>Tokumasu, Takashi</creatorcontrib><creatorcontrib>Nakamaru, Yoshimi</creatorcontrib><creatorcontrib>Kokubun, Chiemi</creatorcontrib><creatorcontrib>Konda, Kayoko</creatorcontrib><creatorcontrib>Yasui, Manabu</creatorcontrib><creatorcontrib>Kurouchi, Masahito</creatorcontrib><creatorcontrib>Can, Musa</creatorcontrib><creatorcontrib>Shawuti, Shalima</creatorcontrib><creatorcontrib>Sudo, Rieko</creatorcontrib><creatorcontrib>Endo, Tamio</creatorcontrib><creatorcontrib>Yasuhara, Shigeo</creatorcontrib><creatorcontrib>Matsuda, Akifumi</creatorcontrib><creatorcontrib>Yoshimoto, Mamoru</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kaneko, Satoru</au><au>Tokumasu, Takashi</au><au>Nakamaru, Yoshimi</au><au>Kokubun, Chiemi</au><au>Konda, Kayoko</au><au>Yasui, Manabu</au><au>Kurouchi, Masahito</au><au>Can, Musa</au><au>Shawuti, Shalima</au><au>Sudo, Rieko</au><au>Endo, Tamio</au><au>Yasuhara, Shigeo</au><au>Matsuda, Akifumi</au><au>Yoshimoto, Mamoru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2019-02-01</date><risdate>2019</risdate><volume>58</volume><issue>SA</issue><spage>SAAD06</spage><pages>SAAD06-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We demonstrated epitaxial growth of magnesium oxide (MgO) on a silicon (Si) substrate with cubic on cubic structure [MgO(001)//Si(001) and MgO(100)//Si(100)]. Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressure and substrate temperature, the lattice constants of MgO decreased along both the surface normal and in-plane directions. To support the facts of (1) constriction of lattice constants and (2) cubic on cubic growth, we show (1) optimal lattice constants with defects in the crystal structure, (2) domain mismatch between MgO and Si instead of lattice mismatch, and (3) stability of MgO crystals on the surface of the Si substrate.</abstract><pub>IOP Publishing</pub><doi>10.7567/1347-4065/aaec11</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-0823-1666</orcidid></addata></record> |
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| title | Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate |
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