Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate

This paper investigated electroluminescence (EL) in AlGaN/GaN high electric mobility transistors fabricated on a free-standing GaN substrate (GaN-on-GaN) with ones on a SiC substrate (GaN-on-SiC) as a reference. When a drain voltage ( V ds ) of the GaN-on-GaN was increased, the EL peak was kept besi...

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Veröffentlicht in:	Applied physics express 2022-09, Vol.15 (9), p.94004
Hauptverfasser:	Ma, Qiang, Ando, Yuji, Tanaka, Atsushi, Wakejima, Akio
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN current collapse electric field electroluminescence GaN HEMTs
Online-Zugang:	Volltext
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