Reductions of implantation induced defects and leakage current by annealing in NH3/N2 atmosphere for Mg- and N-implanted GaN

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Veröffentlicht in:	Applied physics express 2022-02, Vol.15 (2)
Hauptverfasser:	Iguchi, Hiroko, Kataoka, Keita, Kimura, Taishi, Kikuta, Daigo
Format:	Artikel
Sprache:	eng
Schlagworte:	cathodoluminescence gallium nitride ion implantation p-n junction diode semiconductor
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doi_str_mv	10.35848/1882-0786/ac4ddc
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subjects	cathodoluminescence gallium nitride ion implantation p-n junction diode semiconductor
title	Reductions of implantation induced defects and leakage current by annealing in NH3/N2 atmosphere for Mg- and N-implanted GaN
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