Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growt...

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Veröffentlicht in:	Applied physics express 2021-09, Vol.14 (9), p.92003
Hauptverfasser:	Jamal-Eddine, Zane, Gunning, Brendan P., Armstrong, Andrew A., Rajan, Siddharth
Format:	Artikel
Sprache:	eng
Schlagworte:	blue light emitting diode cascaded LED ENGINEERING gallium nitride heterojunction tunnel junction multi-active region LED multi-junction LED optoelectronics tunnel junction tunnel junction optoelectronics
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container_issue	9
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container_title	Applied physics express
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creator	Jamal-Eddine, Zane Gunning, Brendan P. Armstrong, Andrew A. Rajan, Siddharth
description	Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.
doi_str_mv	10.35848/1882-0786/ac1981
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subjects	blue light emitting diode cascaded LED ENGINEERING gallium nitride heterojunction tunnel junction multi-active region LED multi-junction LED optoelectronics tunnel junction tunnel junction optoelectronics
title	Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs
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