Comprehensive investigations on defects’ stability caused lateral charge loss in Ti-doped 3D NAND

Comprehensive investigations on defects’ stability caused lateral charge loss in Ti-doped 3D NAND

The comprehensive investigations on defects’ stability caused lateral charge loss are investigated in Ti-doped 3D NAND. The detailed study shows that the Ti-doping strategy could reduce pre-existing shallow traps in pure Si 3 N 4 . The stability of Ti Si and Ti i defects are observed under program/e...

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Veröffentlicht in:Japanese Journal of Applied Physics 2024-11, Vol.63 (11), p.110902
Hauptverfasser: Wang, Fei, Yu, Hongchen, Lv, Xue, Wang, Zhicheng
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Sprache:eng
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Current carriers
Defects
defects’ stability
lateral charge loss
Lateral stability
Ti-doped 3D NAND
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creator Wang, Fei
Yu, Hongchen
Lv, Xue
Wang, Zhicheng
description The comprehensive investigations on defects’ stability caused lateral charge loss are investigated in Ti-doped 3D NAND. The detailed study shows that the Ti-doping strategy could reduce pre-existing shallow traps in pure Si 3 N 4 . The stability of Ti Si and Ti i defects are observed under program/erase stress, but unstable Ti N defects with shallow-trap levels (0.41 eV) also occur. Based on unstable defects, the device simulations are carried out revealing its effects on lateral charge loss, which indicates that Ti N defects should be reduced for reliability. Our results strongly suggest the stability of Ti-related defects could be key points for lateral charge loss.
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The detailed study shows that the Ti-doping strategy could reduce pre-existing shallow traps in pure Si 3 N 4 . The stability of Ti Si and Ti i defects are observed under program/erase stress, but unstable Ti N defects with shallow-trap levels (0.41 eV) also occur. Based on unstable defects, the device simulations are carried out revealing its effects on lateral charge loss, which indicates that Ti N defects should be reduced for reliability. 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J. Appl. Phys</addtitle><description>The comprehensive investigations on defects’ stability caused lateral charge loss are investigated in Ti-doped 3D NAND. The detailed study shows that the Ti-doping strategy could reduce pre-existing shallow traps in pure Si 3 N 4 . The stability of Ti Si and Ti i defects are observed under program/erase stress, but unstable Ti N defects with shallow-trap levels (0.41 eV) also occur. Based on unstable defects, the device simulations are carried out revealing its effects on lateral charge loss, which indicates that Ti N defects should be reduced for reliability. 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subjects Current carriers
Defects
defects’ stability
lateral charge loss
Lateral stability
Ti-doped 3D NAND
title Comprehensive investigations on defects’ stability caused lateral charge loss in Ti-doped 3D NAND
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