An efficient polishing process for silicon carbide using ion implantation method

We have developed an efficient polishing process for silicon carbide (SiC) using the ion implantation method. An embrittlement layer is generated by an argon ion beam with 50 kV acceleration voltage. Although colloidal silica slurry without oxidant cannot remove the SiC substrate at all, the embrittlement layer is removed by the slurry. The polishing area is defined through patterning with a resin mask during implantation. Such patterning step is expected to compatible with the damascene process on SiC substrates. Raman spectra suggest that the crystal structure of the SiC substrate is not changed after surface polishing because of the E 1 and A 1 characteristics.