Optical characterizations of GaN/MoS2 van der Waals heterojunctions with different band alignments

The integration of gallium nitride (GaN) with 2D molybdenum disulfide (MoS2) to form GaN/MoS2 semiconductor heterojunctions will have high potential applications in novel electronics and optoelectronics. In this study, GaN thin films were grown on pulse-laser-deposited MoS2 layer by plasma-assisted...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-03, Vol.63 (3), p.03SP01
Hauptverfasser:	Hong, Ray-Yu, Wu, Po-Hung, Tsai, Ping-Yu, Yu, Ing-Song
Format:	Artikel
Sprache:	eng
Schlagworte:	Alignment band alignment Energy gap Epitaxial growth Excitons Gallium nitrides GaN/MoS heterojunction Heterojunctions Heterostructures Laser deposition MBE Molybdenum disulfide Optical properties Optoelectronics Photoelectrons Photoluminescence pulsed laser deposition Substrates Thin films X ray photoelectron spectroscopy
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