Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing

In this study, we systematically studied the polarization properties of thin ferroelectric Hf0.5Zr0.5O2 (HZO) films annealed by flash lamp annealing (FLA). We have recently proposed a unique annealing method, two-step FLA, which features high temperature annealing with a minimal increase in thermal...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-02, Vol.63 (2), p.02SP80
Hauptverfasser:	Tanimura, Hideaki, Ota, Yuto, Ueno, Yuma, Kawarazaki, Hikaru, Kato, Shinichi, Mikawa, Takumi, Nara, Yasuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Durability Ferroelectric materials Ferroelectricity flash lamp annealing Flash lamps High temperature Polarization Thermal stress
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creator	Tanimura, Hideaki Ota, Yuto Ueno, Yuma Kawarazaki, Hikaru Kato, Shinichi Mikawa, Takumi Nara, Yasuo
description	In this study, we systematically studied the polarization properties of thin ferroelectric Hf0.5Zr0.5O2 (HZO) films annealed by flash lamp annealing (FLA). We have recently proposed a unique annealing method, two-step FLA, which features high temperature annealing with a minimal increase in thermal budget. Using this technique, we observed improvements in the polarization properties in 5 nm HZO films. These were an increase in the remanent polarization (2Pr) to 24.2 μC cm−2 and better durability compared with other more conventional annealing techniques. In addition, we confirmed that there was no clear degradation in 2Pr under thermal stress. Two-step FLA is one of the effective ways to obtain ferroelectricity with high values of 2Pr and good durability in HZO films thinner than 5 nm.
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subjects	Annealing Durability Ferroelectric materials Ferroelectricity flash lamp annealing Flash lamps High temperature Polarization Thermal stress
title	Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing
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