High-quality Ge epitaxial film based on dislocation trapping mechanism in patterned Si substrate

Threading dislocation density (TDD) in a Ge heteroepitaxial film on Si is reduced based on a dislocation trapping mechanism in a patterned substrate. An array of V-shaped grooves on the submicron scale is patterned in the [110] direction on a (001) Si substrate. Epitaxial growth of Ge with a thickne...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-02, Vol.63 (2), p.2
Hauptverfasser:	Bin Amin, Mohd Faiz, Piedra-Lorenzana, Jose A., Yamane, Keisuke, Hizawa, Takeshi, Nakai, Tetsuya, Ishikawa, Yasuhiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Dislocation density Epitaxial growth Flat surfaces Ge epitaxial growth Germanium silicon photonics Silicon substrates TDD reduction threading dislocation threading dislocation density Threading dislocations Trapping V grooves
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