Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition

The temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport (PVT) with Al concentrations ( C Al ) higher than 10 19 cm −3 is investigated to obtain high-growth-rate and low-cost p + -type substrates suitable for the collectors of n-channel insulated-ga...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2023-10, Vol.62 (10), p.101001
Hauptverfasser:	Hidaka, Atsuki, Kondo, Yuki, Takeshita, Akinobu, Matsuura, Hideharu, Eto, Kazuma, Ji, Shiyang, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Conduction bands Electrical resistivity heavily Al- and N-codoped 4H-SiC heavily Al-doped 4H-SiC Hole mobility Hopping conduction Insulated gate bipolar transistors physical vapor transport Semiconductor devices Silicon carbide Substrates Temperature dependence temperature-dependent resistivity
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