Thermal annealing effects on graphene/n-Si Schottky junction solar cell: removal of PMMA residues
Thermal annealing is one of the most effective ways to improve the efficiency of a graphene/n-Si Schottky junction solar cell. Here, its underlying mechanism has been investigated by comparative studies in terms of the removal of polymethyl methacrylate (PMMA) residues, using the J – V characteristi...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2023-04, Vol.62 (4), p.45002 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 62 |
| creator | Ono, Yuzuki Im, Hojun |
| description | Thermal annealing is one of the most effective ways to improve the efficiency of a graphene/n-Si Schottky junction solar cell. Here, its underlying mechanism has been investigated by comparative studies in terms of the removal of polymethyl methacrylate (PMMA) residues, using the
J
–
V
characteristics and transient photocurrent and photovoltage measurements. The obtained results have revealed that there are trap states that originate from the PMMA residues and cause the large photocurrent leakage as the intensity of the incident light increases. It is also found that the PMMA residues accelerate deterioration and rapidly invalidate hole doping effects. Such undesirable PMMA residues were effectively removed by the thermal annealing treatments, serving to reduce the photocurrent leakage and increase the stability. |
| doi_str_mv | 10.35848/1347-4065/acca57 |
| format | Article |
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J
–
V
characteristics and transient photocurrent and photovoltage measurements. The obtained results have revealed that there are trap states that originate from the PMMA residues and cause the large photocurrent leakage as the intensity of the incident light increases. It is also found that the PMMA residues accelerate deterioration and rapidly invalidate hole doping effects. Such undesirable PMMA residues were effectively removed by the thermal annealing treatments, serving to reduce the photocurrent leakage and increase the stability.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/acca57</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Annealing ; Comparative studies ; Graphene ; Incident light ; Leakage ; Luminous intensity ; Photoelectric effect ; Photoelectric emission ; Photovoltaic cells ; PMMA removal ; Polymethyl methacrylate ; Residues ; Schottky junction solar cell ; silicon ; Solar cells ; thermal annealing</subject><ispartof>Japanese Journal of Applied Physics, 2023-04, Vol.62 (4), p.45002</ispartof><rights>2023 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-4a87f72ebc3fdbff258fce52398f88a2ca5447ceb67abe21e096a014fb9caef83</citedby><cites>FETCH-LOGICAL-c344t-4a87f72ebc3fdbff258fce52398f88a2ca5447ceb67abe21e096a014fb9caef83</cites><orcidid>0000-0001-6713-5135</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/acca57/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Ono, Yuzuki</creatorcontrib><creatorcontrib>Im, Hojun</creatorcontrib><title>Thermal annealing effects on graphene/n-Si Schottky junction solar cell: removal of PMMA residues</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Thermal annealing is one of the most effective ways to improve the efficiency of a graphene/n-Si Schottky junction solar cell. Here, its underlying mechanism has been investigated by comparative studies in terms of the removal of polymethyl methacrylate (PMMA) residues, using the
J
–
V
characteristics and transient photocurrent and photovoltage measurements. The obtained results have revealed that there are trap states that originate from the PMMA residues and cause the large photocurrent leakage as the intensity of the incident light increases. It is also found that the PMMA residues accelerate deterioration and rapidly invalidate hole doping effects. Such undesirable PMMA residues were effectively removed by the thermal annealing treatments, serving to reduce the photocurrent leakage and increase the stability.</description><subject>Annealing</subject><subject>Comparative studies</subject><subject>Graphene</subject><subject>Incident light</subject><subject>Leakage</subject><subject>Luminous intensity</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photovoltaic cells</subject><subject>PMMA removal</subject><subject>Polymethyl methacrylate</subject><subject>Residues</subject><subject>Schottky junction solar cell</subject><subject>silicon</subject><subject>Solar cells</subject><subject>thermal annealing</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsfwFvAi5e1STa7Sb2V4j9oUWg9h2w6aXfdbtZkK_Tbm7qiF_E0zMyb95gfQpeU3KSZ5HJEUy4STvJspI3RmThCg5_RMRoQwmjCx4ydorMQqtjmGacDpJcb8FtdY900oOuyWWOwFkwXsGvw2ut2Aw2MmmRR4oXZuK572-Nq15iujPvgau2xgbq-xR627iMaOYtf5vNJ7EO52kE4RydW1wEuvusQvd7fLaePyez54Wk6mSUm5bxLuJbCCgaFSe2qsJZl0hrIWDqWVkrN4k-cCwNFLnQBjAIZ55pQboux0WBlOkRXvW_r3XvM7VTldr6JkYrJCCGlRIioor3KeBeCB6taX2613ytK1BdJdcCmDthUTzLeJP1N6dpf0__013_oq0q3KmeKK8KzyF-1K5t-At_4hC4</recordid><startdate>20230401</startdate><enddate>20230401</enddate><creator>Ono, Yuzuki</creator><creator>Im, Hojun</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6713-5135</orcidid></search><sort><creationdate>20230401</creationdate><title>Thermal annealing effects on graphene/n-Si Schottky junction solar cell: removal of PMMA residues</title><author>Ono, Yuzuki ; Im, Hojun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-4a87f72ebc3fdbff258fce52398f88a2ca5447ceb67abe21e096a014fb9caef83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Annealing</topic><topic>Comparative studies</topic><topic>Graphene</topic><topic>Incident light</topic><topic>Leakage</topic><topic>Luminous intensity</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photovoltaic cells</topic><topic>PMMA removal</topic><topic>Polymethyl methacrylate</topic><topic>Residues</topic><topic>Schottky junction solar cell</topic><topic>silicon</topic><topic>Solar cells</topic><topic>thermal annealing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ono, Yuzuki</creatorcontrib><creatorcontrib>Im, Hojun</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ono, Yuzuki</au><au>Im, Hojun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal annealing effects on graphene/n-Si Schottky junction solar cell: removal of PMMA residues</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2023-04-01</date><risdate>2023</risdate><volume>62</volume><issue>4</issue><spage>45002</spage><pages>45002-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Thermal annealing is one of the most effective ways to improve the efficiency of a graphene/n-Si Schottky junction solar cell. Here, its underlying mechanism has been investigated by comparative studies in terms of the removal of polymethyl methacrylate (PMMA) residues, using the
J
–
V
characteristics and transient photocurrent and photovoltage measurements. The obtained results have revealed that there are trap states that originate from the PMMA residues and cause the large photocurrent leakage as the intensity of the incident light increases. It is also found that the PMMA residues accelerate deterioration and rapidly invalidate hole doping effects. Such undesirable PMMA residues were effectively removed by the thermal annealing treatments, serving to reduce the photocurrent leakage and increase the stability.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/acca57</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-6713-5135</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2023-04, Vol.62 (4), p.45002 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_iop_journals_10_35848_1347_4065_acca57 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Annealing Comparative studies Graphene Incident light Leakage Luminous intensity Photoelectric effect Photoelectric emission Photovoltaic cells PMMA removal Polymethyl methacrylate Residues Schottky junction solar cell silicon Solar cells thermal annealing |
| title | Thermal annealing effects on graphene/n-Si Schottky junction solar cell: removal of PMMA residues |
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