Effects of ion implantation process on defect distribution in SiC SJ-MOSFET

A superjunction (SJ) structure in power devices is compatible with low specific on-resistance and high breakdown voltage. To fabricate the SJ structure in SiC power devices, the repetition of ion implantation and epitaxial growth processes is a practical method. However, the impact of ion implantati...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2023-01, Vol.62 (1), p.16508
Hauptverfasser:	Fukui, Takuya, Ishii, Tatsuya, Tawara, Takeshi, Takenaka, Kensuke, Kato, Masashi
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier lifetime Cathodoluminescence Deep level transient spectroscopy Defects Electronic devices Epitaxial growth Ion implantation MOSFET MOSFETs Room temperature Silicon carbide superjunction
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