Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells

Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in semipolar and nonpolar InGaN QWs are very sensiti...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2022-06, Vol.61 (6), p.61003
Hauptverfasser:	Sakai, Shigeta, Kojima, Kazunobu, Chichibu, Shigefusa F., Yamaguchi, Atsushi A.
Format:	Artikel
Sprache:	eng
Schlagworte:	crystallographic orientation Deformation deformation potentials Indium gallium nitrides nitride semiconductors Optical polarization optical polarization properties Optical properties Perturbation theory Quantum wells Substrates valence band
Online-Zugang:	Volltext
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