Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells
Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in semipolar and nonpolar InGaN QWs are very sensiti...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2022-06, Vol.61 (6), p.61003 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Sakai, Shigeta Kojima, Kazunobu Chichibu, Shigefusa F. Yamaguchi, Atsushi A. |
| description | Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in semipolar and nonpolar InGaN QWs are very sensitive to the values of deformation potentials, all the reported data on the optical polarization properties have been theoretically analyzed based on the
k
·
p
perturbation theory in this study, and we have made a precise determination of the deformation potentials’ set. In addition, optical gain characteristics of InGaN QWs on GaN substrates with arbitrary substrate orientations have been theoretically calculated by using the determined deformation potentials’ set. It is found that low-angle semipolar substrate orientation (
θ ∼
45°) is very promising for low-cost and high-performance green LDs with cleaved-facet cavity mirrors. |
| doi_str_mv | 10.35848/1347-4065/ac62e4 |
| format | Article |
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k
·
p
perturbation theory in this study, and we have made a precise determination of the deformation potentials’ set. In addition, optical gain characteristics of InGaN QWs on GaN substrates with arbitrary substrate orientations have been theoretically calculated by using the determined deformation potentials’ set. It is found that low-angle semipolar substrate orientation (
θ ∼
45°) is very promising for low-cost and high-performance green LDs with cleaved-facet cavity mirrors.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac62e4</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>crystallographic orientation ; Deformation ; deformation potentials ; Indium gallium nitrides ; nitride semiconductors ; Optical polarization ; optical polarization properties ; Optical properties ; Perturbation theory ; Quantum wells ; Substrates ; valence band</subject><ispartof>Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.61003</ispartof><rights>2022 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c296t-37549c413c466ada3aae2aa31ed3565fbf87b82cb5a8160b1208f420392dc25d3</cites><orcidid>0000-0003-0128-1978 ; 0000-0001-9558-1642</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac62e4/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27923,27924,53845,53892</link.rule.ids></links><search><creatorcontrib>Sakai, Shigeta</creatorcontrib><creatorcontrib>Kojima, Kazunobu</creatorcontrib><creatorcontrib>Chichibu, Shigefusa F.</creatorcontrib><creatorcontrib>Yamaguchi, Atsushi A.</creatorcontrib><title>Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in semipolar and nonpolar InGaN QWs are very sensitive to the values of deformation potentials, all the reported data on the optical polarization properties have been theoretically analyzed based on the
k
·
p
perturbation theory in this study, and we have made a precise determination of the deformation potentials’ set. In addition, optical gain characteristics of InGaN QWs on GaN substrates with arbitrary substrate orientations have been theoretically calculated by using the determined deformation potentials’ set. It is found that low-angle semipolar substrate orientation (
θ ∼
45°) is very promising for low-cost and high-performance green LDs with cleaved-facet cavity mirrors.</description><subject>crystallographic orientation</subject><subject>Deformation</subject><subject>deformation potentials</subject><subject>Indium gallium nitrides</subject><subject>nitride semiconductors</subject><subject>Optical polarization</subject><subject>optical polarization properties</subject><subject>Optical properties</subject><subject>Perturbation theory</subject><subject>Quantum wells</subject><subject>Substrates</subject><subject>valence band</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LxDAQxYMouK5-AG8BL17q5l-z6VEWXRcW9aDnMG1TyNIm3aRF9tubtaIX8TS8N795Aw-ha0rueK6EWlAulpkgMl9AJZkRJ2j2Y52iGSGMZqJg7BxdxLhLUuaCztD4Gkxlo8G1GUzorIPBeod9k4zGh26SvR-MGyy0EVuHN24Nzxja1h9wAkxIi6MfTWd730LA4GrsvJvEhO9HcMPY4Q_TtvESnTUpzFx9zzl6f3x4Wz1l25f1ZnW_zSpWyCHjy1wUlaC8ElJCDRzAMABOTc1zmTdlo5alYlWZg6KSlJQR1QhGeMHqiuU1n6ObKbcPfj-aOOidH4NLLzWTUvEiPVCJohNVBR9jMI3ug-0gHDQl-qtdfaxSH6vUU7vpJpturO9_Q__jb__gdzvotaRaaiIpIVz3dcM_AeLbipQ</recordid><startdate>20220601</startdate><enddate>20220601</enddate><creator>Sakai, Shigeta</creator><creator>Kojima, Kazunobu</creator><creator>Chichibu, Shigefusa F.</creator><creator>Yamaguchi, Atsushi A.</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0128-1978</orcidid><orcidid>https://orcid.org/0000-0001-9558-1642</orcidid></search><sort><creationdate>20220601</creationdate><title>Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells</title><author>Sakai, Shigeta ; Kojima, Kazunobu ; Chichibu, Shigefusa F. ; Yamaguchi, Atsushi A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c296t-37549c413c466ada3aae2aa31ed3565fbf87b82cb5a8160b1208f420392dc25d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>crystallographic orientation</topic><topic>Deformation</topic><topic>deformation potentials</topic><topic>Indium gallium nitrides</topic><topic>nitride semiconductors</topic><topic>Optical polarization</topic><topic>optical polarization properties</topic><topic>Optical properties</topic><topic>Perturbation theory</topic><topic>Quantum wells</topic><topic>Substrates</topic><topic>valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sakai, Shigeta</creatorcontrib><creatorcontrib>Kojima, Kazunobu</creatorcontrib><creatorcontrib>Chichibu, Shigefusa F.</creatorcontrib><creatorcontrib>Yamaguchi, Atsushi A.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sakai, Shigeta</au><au>Kojima, Kazunobu</au><au>Chichibu, Shigefusa F.</au><au>Yamaguchi, Atsushi A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2022-06-01</date><risdate>2022</risdate><volume>61</volume><issue>6</issue><spage>61003</spage><pages>61003-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in semipolar and nonpolar InGaN QWs are very sensitive to the values of deformation potentials, all the reported data on the optical polarization properties have been theoretically analyzed based on the
k
·
p
perturbation theory in this study, and we have made a precise determination of the deformation potentials’ set. In addition, optical gain characteristics of InGaN QWs on GaN substrates with arbitrary substrate orientations have been theoretically calculated by using the determined deformation potentials’ set. It is found that low-angle semipolar substrate orientation (
θ ∼
45°) is very promising for low-cost and high-performance green LDs with cleaved-facet cavity mirrors.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac62e4</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-0128-1978</orcidid><orcidid>https://orcid.org/0000-0001-9558-1642</orcidid></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.61003 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_iop_journals_10_35848_1347_4065_ac62e4 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | crystallographic orientation Deformation deformation potentials Indium gallium nitrides nitride semiconductors Optical polarization optical polarization properties Optical properties Perturbation theory Quantum wells Substrates valence band |
| title | Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells |
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