Atomic diffusion bonding with oxide underlayers using Al and amorphous Si films for high optical density applications
Atomic diffusion bonding with oxide underlayers using Al and a-Si films was examined to create a bonded interface with Al 2 O 3 and Si-oxides having large band gaps for high optical density applications. Surface free energy of the bonded interface greater than 2 J m −2 and 100% light transmittance w...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2022-06, Vol.61 (SF), p.SF1011 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 61 |
| creator | Yonezawa, Gen Uomoto, Miyuki Shimatsu, Takehito |
| description | Atomic diffusion bonding with oxide underlayers using Al and a-Si films was examined to create a bonded interface with Al
2
O
3
and Si-oxides having large band gaps for high optical density applications. Surface free energy of the bonded interface greater than 2 J m
−2
and 100% light transmittance were achieved after annealing at 300 °C in the range of film thicknesses
δ
on both sides from 0.3 to 0.5 nm using Al films and with
δ
of around 0.5 nm using a-Si films. Structural analyses revealed that the bonded interface consists of Al
2
O
3
and Si-oxides with oxygen dissociated from oxide underlayers. |
| doi_str_mv | 10.35848/1347-4065/ac5870 |
| format | Article |
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2
O
3
and Si-oxides having large band gaps for high optical density applications. Surface free energy of the bonded interface greater than 2 J m
−2
and 100% light transmittance were achieved after annealing at 300 °C in the range of film thicknesses
δ
on both sides from 0.3 to 0.5 nm using Al films and with
δ
of around 0.5 nm using a-Si films. Structural analyses revealed that the bonded interface consists of Al
2
O
3
and Si-oxides with oxygen dissociated from oxide underlayers.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac5870</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Aluminum oxide ; Amorphous silicon ; atomic diffusion bonding ; band gaps ; Bonding ; bonding strength ; Chemical bonds ; Diffusion welding ; Free energy ; Light transmittance ; Optical density ; oxide underlayers ; Silicon films ; SiO ; Thickness</subject><ispartof>Japanese Journal of Applied Physics, 2022-06, Vol.61 (SF), p.SF1011</ispartof><rights>2022 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-9507ddfe8e48b95a3e58cba3a2ac00fc3c2bd70f04ce82ebc29a8bb255aa773e3</citedby><cites>FETCH-LOGICAL-c388t-9507ddfe8e48b95a3e58cba3a2ac00fc3c2bd70f04ce82ebc29a8bb255aa773e3</cites><orcidid>0000-0001-7492-2006</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac5870/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Yonezawa, Gen</creatorcontrib><creatorcontrib>Uomoto, Miyuki</creatorcontrib><creatorcontrib>Shimatsu, Takehito</creatorcontrib><title>Atomic diffusion bonding with oxide underlayers using Al and amorphous Si films for high optical density applications</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Atomic diffusion bonding with oxide underlayers using Al and a-Si films was examined to create a bonded interface with Al
2
O
3
and Si-oxides having large band gaps for high optical density applications. Surface free energy of the bonded interface greater than 2 J m
−2
and 100% light transmittance were achieved after annealing at 300 °C in the range of film thicknesses
δ
on both sides from 0.3 to 0.5 nm using Al films and with
δ
of around 0.5 nm using a-Si films. Structural analyses revealed that the bonded interface consists of Al
2
O
3
and Si-oxides with oxygen dissociated from oxide underlayers.</description><subject>Aluminum oxide</subject><subject>Amorphous silicon</subject><subject>atomic diffusion bonding</subject><subject>band gaps</subject><subject>Bonding</subject><subject>bonding strength</subject><subject>Chemical bonds</subject><subject>Diffusion welding</subject><subject>Free energy</subject><subject>Light transmittance</subject><subject>Optical density</subject><subject>oxide underlayers</subject><subject>Silicon films</subject><subject>SiO</subject><subject>Thickness</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKs_wFvAk4e1-dh0s8dSrAoFD9VzyOajTdluYrKL9t-bWtGLCAPDzDzvDPMCcI3RHWW85BNMy6oo0ZRNpGK8Qidg9NM6BSOECC7KmpBzcJHSNpdTVuIRGGa93zkFtbN2SM53sPGddt0avrt-A_2H0wYOnTaxlXsTE8xQHs5aKDsN5c7HsPFDgisHrWt3CVof4catszT0TskWatMl1--hDKHNjT7fSJfgzMo2mavvPAavi_uX-WOxfH54ms-WhaKc90XNUKW1NdyUvKmZpIZx1UgqiVQIWUUVaXSFLCqV4cQ0itSSNw1hTMqqooaOwc1xb4j-bTCpF1s_xC6fFPl_yqopqatM4SOlok8pGitCdDsZ9wIj8eWuOFgpDlaKo7tZUxw1zoffpf_xt3_w260MYorFapEDI4xF0JZ-AmDRjDk</recordid><startdate>20220601</startdate><enddate>20220601</enddate><creator>Yonezawa, Gen</creator><creator>Uomoto, Miyuki</creator><creator>Shimatsu, Takehito</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-7492-2006</orcidid></search><sort><creationdate>20220601</creationdate><title>Atomic diffusion bonding with oxide underlayers using Al and amorphous Si films for high optical density applications</title><author>Yonezawa, Gen ; Uomoto, Miyuki ; Shimatsu, Takehito</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-9507ddfe8e48b95a3e58cba3a2ac00fc3c2bd70f04ce82ebc29a8bb255aa773e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum oxide</topic><topic>Amorphous silicon</topic><topic>atomic diffusion bonding</topic><topic>band gaps</topic><topic>Bonding</topic><topic>bonding strength</topic><topic>Chemical bonds</topic><topic>Diffusion welding</topic><topic>Free energy</topic><topic>Light transmittance</topic><topic>Optical density</topic><topic>oxide underlayers</topic><topic>Silicon films</topic><topic>SiO</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yonezawa, Gen</creatorcontrib><creatorcontrib>Uomoto, Miyuki</creatorcontrib><creatorcontrib>Shimatsu, Takehito</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yonezawa, Gen</au><au>Uomoto, Miyuki</au><au>Shimatsu, Takehito</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic diffusion bonding with oxide underlayers using Al and amorphous Si films for high optical density applications</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2022-06-01</date><risdate>2022</risdate><volume>61</volume><issue>SF</issue><spage>SF1011</spage><pages>SF1011-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Atomic diffusion bonding with oxide underlayers using Al and a-Si films was examined to create a bonded interface with Al
2
O
3
and Si-oxides having large band gaps for high optical density applications. Surface free energy of the bonded interface greater than 2 J m
−2
and 100% light transmittance were achieved after annealing at 300 °C in the range of film thicknesses
δ
on both sides from 0.3 to 0.5 nm using Al films and with
δ
of around 0.5 nm using a-Si films. Structural analyses revealed that the bonded interface consists of Al
2
O
3
and Si-oxides with oxygen dissociated from oxide underlayers.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac5870</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-7492-2006</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2022-06, Vol.61 (SF), p.SF1011 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_iop_journals_10_35848_1347_4065_ac5870 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Aluminum oxide Amorphous silicon atomic diffusion bonding band gaps Bonding bonding strength Chemical bonds Diffusion welding Free energy Light transmittance Optical density oxide underlayers Silicon films SiO Thickness |
| title | Atomic diffusion bonding with oxide underlayers using Al and amorphous Si films for high optical density applications |
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