Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

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Veröffentlicht in:	Japanese Journal of Applied Physics 2022-06, Vol.61 (SD)
Hauptverfasser:	Chen, Jun-Rong, Chen, Henry J. H., Tseng, Shin-Lun
Format:	Artikel
Sprache:	eng
Schlagworte:	APTES double-gate ISFETs poly-Si
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container_title	Japanese Journal of Applied Physics
container_volume	61
creator	Chen, Jun-Rong Chen, Henry J. H. Tseng, Shin-Lun
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doi_str_mv	10.35848/1347-4065/ac5422
format	Article
fullrecord	<record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_35848_1347_4065_ac5422</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jjapac5422</sourcerecordid><originalsourceid>FETCH-LOGICAL-i200t-3aa3f0349f1c91e9fd5cdfd1d0d3317b3188418e3c1baabd2e46a9a80865ff373</originalsourceid><addsrcrecordid>eNptkE9rwzAMxc3YYF23D7Bbrjt4sWwnTY6l6_5AoYV2Z-PYcnGWJiVOx_rt565jp4FA6OnpCX6E3AN7FFkhixSEnFDJ8izVJpOcX5DRn3RJRoxxoLLk_JrchFDHMc8kjMjXqmuOpj-GQTeNb5EG33jTtbTSAW1iu0PVIN3qARMf1YBt8IP_xMR5bCxF59AMydDrqIeh60NyCL7dJtPVZr5O137JkxhtPs6XcbHDXRXdeEuunG4C3v32MXl_nm9mr3SxfHmbTRfUc8YGKrQWjglZOjAlYOlsZqyzYJkVAiaVgKKQUKAwUGldWY4y16UuWJFnzomJGBN6zvXdXtXdoW_jNwVM_WBTJ0bqxEidsUX_wz_-utZ7lYNaP8UCxkDtrRPf951xZg</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Chen, Jun-Rong ; Chen, Henry J. H. ; Tseng, Shin-Lun</creator><creatorcontrib>Chen, Jun-Rong ; Chen, Henry J. H. ; Tseng, Shin-Lun</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac5422</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>APTES ; double-gate ; ISFETs ; poly-Si</subject><ispartof>Japanese Journal of Applied Physics, 2022-06, Vol.61 (SD)</ispartof><rights>2022 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-0614-8749</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac5422/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Chen, Jun-Rong</creatorcontrib><creatorcontrib>Chen, Henry J. H.</creatorcontrib><creatorcontrib>Tseng, Shin-Lun</creatorcontrib><title>Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><subject>APTES</subject><subject>double-gate</subject><subject>ISFETs</subject><subject>poly-Si</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNptkE9rwzAMxc3YYF23D7Bbrjt4sWwnTY6l6_5AoYV2Z-PYcnGWJiVOx_rt565jp4FA6OnpCX6E3AN7FFkhixSEnFDJ8izVJpOcX5DRn3RJRoxxoLLk_JrchFDHMc8kjMjXqmuOpj-GQTeNb5EG33jTtbTSAW1iu0PVIN3qARMf1YBt8IP_xMR5bCxF59AMydDrqIeh60NyCL7dJtPVZr5O137JkxhtPs6XcbHDXRXdeEuunG4C3v32MXl_nm9mr3SxfHmbTRfUc8YGKrQWjglZOjAlYOlsZqyzYJkVAiaVgKKQUKAwUGldWY4y16UuWJFnzomJGBN6zvXdXtXdoW_jNwVM_WBTJ0bqxEidsUX_wz_-utZ7lYNaP8UCxkDtrRPf951xZg</recordid><startdate>20220601</startdate><enddate>20220601</enddate><creator>Chen, Jun-Rong</creator><creator>Chen, Henry J. H.</creator><creator>Tseng, Shin-Lun</creator><general>IOP Publishing</general><scope/><orcidid>https://orcid.org/0000-0002-0614-8749</orcidid></search><sort><creationdate>20220601</creationdate><title>Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane</title><author>Chen, Jun-Rong ; Chen, Henry J. H. ; Tseng, Shin-Lun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i200t-3aa3f0349f1c91e9fd5cdfd1d0d3317b3188418e3c1baabd2e46a9a80865ff373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>APTES</topic><topic>double-gate</topic><topic>ISFETs</topic><topic>poly-Si</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Jun-Rong</creatorcontrib><creatorcontrib>Chen, Henry J. H.</creatorcontrib><creatorcontrib>Tseng, Shin-Lun</creatorcontrib><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Jun-Rong</au><au>Chen, Henry J. H.</au><au>Tseng, Shin-Lun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2022-06-01</date><risdate>2022</risdate><volume>61</volume><issue>SD</issue><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac5422</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-0614-8749</orcidid><oa>free_for_read</oa></addata></record>
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language	eng
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	APTES double-gate ISFETs poly-Si
title	Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T23%3A10%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Polycrystalline-silicon-based%20double-gate%20ion-sensitive%20field-effect%20transistors%20using%20APTES/SiO2%20stack-sensing%20membrane&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Chen,%20Jun-Rong&rft.date=2022-06-01&rft.volume=61&rft.issue=SD&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.35848/1347-4065/ac5422&rft_dat=%3Ciop%3Ejjapac5422%3C/iop%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true