Novel attributes of a dual pocket tunnel field-effect transistor

In this paper, we propose the application of a dual pocket adjacent to the source in a tunnel field effect transistor (TFET) to improve its electrical characteristics. Using two-dimensional device simulations, we demonstrate that if appropriate doping concentration and length are chosen for the dual...

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Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2022-03, Vol.61 (3), p.35001
Hauptverfasser:	Gupta, Abhinav, Saurabh, Sneh
Format:	Artikel
Sprache:	eng
Schlagworte:	Band to band tunneling Energy bands Field effect transistors Semiconductor devices Subthreshold Slope Transistors Tunnel field effect transistor Tunnels
Online-Zugang:	Volltext
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