Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4
C2F4 is a potential etching gas for high aspect ratio etching of SiO2 films owing to its high etch rate. However, it is difficult to fill C2F4 to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this problem, we developed an etching system, where the on-s...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2021-05, Vol.60 (5) |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Iino, Daiki Tanida, Satoshi Kurihara, Kazuaki Fukumizu, Hiroyuki Sakai, Itsuko Abe, Junko Fukuhara, Jota Tanaka, Rei Tanaka, Tomoyuki Kikura, Jou Kakiuchi, Hiroaki Yasutake, Kiyoshi Ohmi, Hiromasa Hayashi, Hisataka |
| description | C2F4 is a potential etching gas for high aspect ratio etching of SiO2 films owing to its high etch rate. However, it is difficult to fill C2F4 to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this problem, we developed an etching system, where the on-site synthesized C2F4 from CF4 using a VHF plasma was supplied directly into the etching reactor. It was demonstrated that SiO2 etching using synthesized-C2F4/O2/Ar gas mixture plasma was carried out successfully and the etch rate became 2.7 times higher than that of CF4/O2/Ar gas mixture plasma. |
| doi_str_mv | 10.35848/1347-4065/abf9e3 |
| format | Article |
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However, it is difficult to fill C2F4 to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this problem, we developed an etching system, where the on-site synthesized C2F4 from CF4 using a VHF plasma was supplied directly into the etching reactor. It was demonstrated that SiO2 etching using synthesized-C2F4/O2/Ar gas mixture plasma was carried out successfully and the etch rate became 2.7 times higher than that of CF4/O2/Ar gas mixture plasma.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/abf9e3</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Gas cylinders ; Gas mixtures ; High aspect ratio ; Mass production ; Onsite ; Plasma etching ; Reactive ion etching ; RIE ; Silicon dioxide ; synthesized gas</subject><ispartof>Japanese Journal of Applied Physics, 2021-05, Vol.60 (5)</ispartof><rights>2021 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics May 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/abf9e3/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Iino, Daiki</creatorcontrib><creatorcontrib>Tanida, Satoshi</creatorcontrib><creatorcontrib>Kurihara, Kazuaki</creatorcontrib><creatorcontrib>Fukumizu, Hiroyuki</creatorcontrib><creatorcontrib>Sakai, Itsuko</creatorcontrib><creatorcontrib>Abe, Junko</creatorcontrib><creatorcontrib>Fukuhara, Jota</creatorcontrib><creatorcontrib>Tanaka, Rei</creatorcontrib><creatorcontrib>Tanaka, Tomoyuki</creatorcontrib><creatorcontrib>Kikura, Jou</creatorcontrib><creatorcontrib>Kakiuchi, Hiroaki</creatorcontrib><creatorcontrib>Yasutake, Kiyoshi</creatorcontrib><creatorcontrib>Ohmi, Hiromasa</creatorcontrib><creatorcontrib>Hayashi, Hisataka</creatorcontrib><title>Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>C2F4 is a potential etching gas for high aspect ratio etching of SiO2 films owing to its high etch rate. However, it is difficult to fill C2F4 to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this problem, we developed an etching system, where the on-site synthesized C2F4 from CF4 using a VHF plasma was supplied directly into the etching reactor. 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J. Appl. Phys</addtitle><date>2021-05-01</date><risdate>2021</risdate><volume>60</volume><issue>5</issue><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>C2F4 is a potential etching gas for high aspect ratio etching of SiO2 films owing to its high etch rate. However, it is difficult to fill C2F4 to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this problem, we developed an etching system, where the on-site synthesized C2F4 from CF4 using a VHF plasma was supplied directly into the etching reactor. It was demonstrated that SiO2 etching using synthesized-C2F4/O2/Ar gas mixture plasma was carried out successfully and the etch rate became 2.7 times higher than that of CF4/O2/Ar gas mixture plasma.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/abf9e3</doi><tpages>5</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2021-05, Vol.60 (5) |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Gas cylinders Gas mixtures High aspect ratio Mass production Onsite Plasma etching Reactive ion etching RIE Silicon dioxide synthesized gas |
| title | Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4 |
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