Sn-V centers in diamond activated by ultra high pressure and high temperature treatment

We investigate the activation of Sn-V centers in diamond through ions implantation and the subsequent high pressure and high temperature (HPHT) treatment at 15 GPa and 2300 °C. Sn ions is implanted at fluences greater than 2 × 1014 cm−2 by varying the acceleration voltage up to 180 kV, which results...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2021-03, Vol.60 (3), p.35501
Hauptverfasser:	Fukuta, Rei, Murakami, Yohei, Ohfuji, Hiroaki, Shinmei, Toru, Irifune, Tetsuo, Ishikawa, Fumitaro
Format:	Artikel
Sprache:	eng
Schlagworte:	diamond Diamonds Emission High pressure High temperature Ion implantation Sn-V center
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