ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

ZrS2 amibipolar MISFETs are obtained in operations with both electrons and holes. A layered polycrystalline ZrS2 thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm × 2.4 cm SiO2/Si substrate. The ZrS2 FETs have Al2O3 gate insulator and TiN film for both the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2021-05, Vol.60 (SB)
Hauptverfasser:	Hamada, Masaya, Matsuura, Kentaro, Hamada, Takuya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	2D material Aluminum oxide Electrodes Electrons FET Silicon dioxide Silicon substrates sputtering Thin films transition metal di-chalcogenide Work functions ZrS2
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!