ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact
ZrS2 amibipolar MISFETs are obtained in operations with both electrons and holes. A layered polycrystalline ZrS2 thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm × 2.4 cm SiO2/Si substrate. The ZrS2 FETs have Al2O3 gate insulator and TiN film for both the...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2021-05, Vol.60 (SB) |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 60 |
| creator | Hamada, Masaya Matsuura, Kentaro Hamada, Takuya Muneta, Iriya Kakushima, Kuniyuki Tsutsui, Kazuo Wakabayashi, Hitoshi |
| description | ZrS2 amibipolar MISFETs are obtained in operations with both electrons and holes. A layered polycrystalline ZrS2 thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm × 2.4 cm SiO2/Si substrate. The ZrS2 FETs have Al2O3 gate insulator and TiN film for both the top-gate electrode and Schottky-barrier contact, which show symmetrical Id-Vgs curves with a Voff of 0.4 V contributed by the TiN film with midgap work function to the sputtered ZrS2 film. Notably, ambipolar FET operations because of both electrons and holes were successfully observed with an on/off current ratio of 250. This is an important step to realize n/p-type unipolar ZrS2 FETs. |
| doi_str_mv | 10.35848/1347-4065/abd6d7 |
| format | Article |
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A layered polycrystalline ZrS2 thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm × 2.4 cm SiO2/Si substrate. The ZrS2 FETs have Al2O3 gate insulator and TiN film for both the top-gate electrode and Schottky-barrier contact, which show symmetrical Id-Vgs curves with a Voff of 0.4 V contributed by the TiN film with midgap work function to the sputtered ZrS2 film. Notably, ambipolar FET operations because of both electrons and holes were successfully observed with an on/off current ratio of 250. 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This is an important step to realize n/p-type unipolar ZrS2 FETs.</description><subject>2D material</subject><subject>Aluminum oxide</subject><subject>Electrodes</subject><subject>Electrons</subject><subject>FET</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>sputtering</subject><subject>Thin films</subject><subject>transition metal di-chalcogenide</subject><subject>Work functions</subject><subject>ZrS2</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNptkU9LAzEQxYMoWKsfwFvAk4do_u_maItaQfRQvXgJ2STbZt1t1myK-O1drehFGBhm5sc8eA-AU4IvmCh5eUkYLxDHUlyayklX7IHJ72ofTDCmBHFF6SE4GoZmHKXgZALSS1pSOHx0nc8pWNMi01Whj61J8Ob6aYDvIa_hxpuEuuBWpodP4QHWoe1gHROs4njNsUcrkz30rbc5Reeh2Ti4tOuY8-sHqkxKwSdo4yYbm4_BQW3awZ_89Cl4HpXmC3T_eHs3v7pHgXGakXNYWMFK4ZkiFJcFUVhS6ogiVogKV1wqSSvulZNYiNqVhhWV9YQpo6xkbArOdn_7FN-2fsi6idu0GSU15UVZKFayYqTOd1SI_R_QNKbXEuvlbKzZAgvdu3pk0T8swfo7Av3lt_7yW-8iYJ_thXlf</recordid><startdate>20210501</startdate><enddate>20210501</enddate><creator>Hamada, Masaya</creator><creator>Matsuura, Kentaro</creator><creator>Hamada, Takuya</creator><creator>Muneta, Iriya</creator><creator>Kakushima, Kuniyuki</creator><creator>Tsutsui, Kazuo</creator><creator>Wakabayashi, Hitoshi</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>O3W</scope><scope>TSCCA</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5830-5283</orcidid></search><sort><creationdate>20210501</creationdate><title>ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact</title><author>Hamada, Masaya ; Matsuura, Kentaro ; Hamada, Takuya ; Muneta, Iriya ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Wakabayashi, Hitoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i342t-dd05c5385e3912087190622d191c55b0b46962b4e9d6055fd8a37bce139a9c633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>2D material</topic><topic>Aluminum oxide</topic><topic>Electrodes</topic><topic>Electrons</topic><topic>FET</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>sputtering</topic><topic>Thin films</topic><topic>transition metal di-chalcogenide</topic><topic>Work functions</topic><topic>ZrS2</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hamada, Masaya</creatorcontrib><creatorcontrib>Matsuura, Kentaro</creatorcontrib><creatorcontrib>Hamada, Takuya</creatorcontrib><creatorcontrib>Muneta, Iriya</creatorcontrib><creatorcontrib>Kakushima, Kuniyuki</creatorcontrib><creatorcontrib>Tsutsui, Kazuo</creatorcontrib><creatorcontrib>Wakabayashi, Hitoshi</creatorcontrib><collection>Institute of Physics Open Access Journal Titles</collection><collection>IOPscience (Open Access)</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hamada, Masaya</au><au>Matsuura, Kentaro</au><au>Hamada, Takuya</au><au>Muneta, Iriya</au><au>Kakushima, Kuniyuki</au><au>Tsutsui, Kazuo</au><au>Wakabayashi, Hitoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2021-05-01</date><risdate>2021</risdate><volume>60</volume><issue>SB</issue><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>ZrS2 amibipolar MISFETs are obtained in operations with both electrons and holes. A layered polycrystalline ZrS2 thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm × 2.4 cm SiO2/Si substrate. The ZrS2 FETs have Al2O3 gate insulator and TiN film for both the top-gate electrode and Schottky-barrier contact, which show symmetrical Id-Vgs curves with a Voff of 0.4 V contributed by the TiN film with midgap work function to the sputtered ZrS2 film. Notably, ambipolar FET operations because of both electrons and holes were successfully observed with an on/off current ratio of 250. 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| language | eng |
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| source | Institute of Physics Journals |
| subjects | 2D material Aluminum oxide Electrodes Electrons FET Silicon dioxide Silicon substrates sputtering Thin films transition metal di-chalcogenide Work functions ZrS2 |
| title | ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact |
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