Design and characterization of a low-optical-loss UV-C laser diode
We present an optical modeling and characterization study of prototype ultraviolet laser diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of modal loss caused by optical mode coupling to the absorptive layers on the p-side (i.e. p-contact and p-metal layers)....
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2020-09, Vol.59 (9), p.94001 |
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| container_issue | 9 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 59 |
| creator | Zhang, Ziyi Kushimoto, Maki Sakai, Tadayoshi Sugiyama, Naoharu Schowalter, Leo J. Sasaoka, Chiaki Amano, Hiroshi |
| description | We present an optical modeling and characterization study of prototype ultraviolet laser diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of modal loss caused by optical mode coupling to the absorptive layers on the p-side (i.e. p-contact and p-metal layers). The transparent AlN substrates enabled optical pumping for measuring modal loss without requiring functioning LDs. The modal loss measured in this way was in good agreement with electrically evaluated results of processed LDs, and both results were consistent with optical modeling predictions. By using 0.32 m thick p-side cladding, we were able to suppress the modal loss of the designed LD structure to 8.4 cm−1, where the contribution from the absorptive p-contact layers was less than 3 cm−1. |
| doi_str_mv | 10.35848/1347-4065/abaac6 |
| format | Article |
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The transparent AlN substrates enabled optical pumping for measuring modal loss without requiring functioning LDs. The modal loss measured in this way was in good agreement with electrically evaluated results of processed LDs, and both results were consistent with optical modeling predictions. By using 0.32 m thick p-side cladding, we were able to suppress the modal loss of the designed LD structure to 8.4 cm−1, where the contribution from the absorptive p-contact layers was less than 3 cm−1.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/abaac6</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Absorptivity ; AlGaN ; Coupled modes ; Crystal growth ; Crystal structure ; Electric contacts ; Laser Diodes ; Modelling ; Optical pumping ; Semiconductor lasers ; Single crystals ; Substrates ; Ultraviolet ; Ultraviolet lasers</subject><ispartof>Japanese Journal of Applied Physics, 2020-09, Vol.59 (9), p.94001</ispartof><rights>2020 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Sep 1, 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-3636f536a9245321e214bbdbae22dabc4dbd15b6765f4b086da0f2835eec3ac43</citedby><cites>FETCH-LOGICAL-c410t-3636f536a9245321e214bbdbae22dabc4dbd15b6765f4b086da0f2835eec3ac43</cites><orcidid>0000-0001-9617-9049 ; 0000-0003-3974-7139 ; 0000-0002-4854-8521</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/abaac6/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Zhang, Ziyi</creatorcontrib><creatorcontrib>Kushimoto, Maki</creatorcontrib><creatorcontrib>Sakai, Tadayoshi</creatorcontrib><creatorcontrib>Sugiyama, Naoharu</creatorcontrib><creatorcontrib>Schowalter, Leo J.</creatorcontrib><creatorcontrib>Sasaoka, Chiaki</creatorcontrib><creatorcontrib>Amano, Hiroshi</creatorcontrib><title>Design and characterization of a low-optical-loss UV-C laser diode</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We present an optical modeling and characterization study of prototype ultraviolet laser diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of modal loss caused by optical mode coupling to the absorptive layers on the p-side (i.e. p-contact and p-metal layers). The transparent AlN substrates enabled optical pumping for measuring modal loss without requiring functioning LDs. The modal loss measured in this way was in good agreement with electrically evaluated results of processed LDs, and both results were consistent with optical modeling predictions. By using 0.32 m thick p-side cladding, we were able to suppress the modal loss of the designed LD structure to 8.4 cm−1, where the contribution from the absorptive p-contact layers was less than 3 cm−1.</description><subject>Absorptivity</subject><subject>AlGaN</subject><subject>Coupled modes</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Electric contacts</subject><subject>Laser Diodes</subject><subject>Modelling</subject><subject>Optical pumping</subject><subject>Semiconductor lasers</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Ultraviolet</subject><subject>Ultraviolet lasers</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRsFZ_gLcFL17W7neTo9ZPKHixXpfZj2hC7MbdFNFfb2pEL-JpmOF5Z4YHoWNGz4QqZDFjQs6JpFrNwAI4vYMmP6NdNKGUMyJLzvfRQc7N0Gol2QRdXIZcP60xrD12z5DA9SHVH9DXcY1jhQG38Y3Erq8dtKSNOePVI1ngFnJI2NfRh0O0V0Gbw9F3naLV9dXD4pYs72_uFudL4iSjPRFa6EoJDSWXSnAWOJPWeguBcw_WSW89U1bPtaqkpYX2QCteCBWCE-CkmKKTcW-X4usm5N40cZPWw0nD5SCBi5IWA8VGyqXh2RQq06X6BdK7YdR8qTJbL2brxYyqhgwZM3Xsfpf-x5_-wTcNdEaVpjS0lJQy0_lKfAIA5XgM</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Zhang, Ziyi</creator><creator>Kushimoto, Maki</creator><creator>Sakai, Tadayoshi</creator><creator>Sugiyama, Naoharu</creator><creator>Schowalter, Leo J.</creator><creator>Sasaoka, Chiaki</creator><creator>Amano, Hiroshi</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9617-9049</orcidid><orcidid>https://orcid.org/0000-0003-3974-7139</orcidid><orcidid>https://orcid.org/0000-0002-4854-8521</orcidid></search><sort><creationdate>20200901</creationdate><title>Design and characterization of a low-optical-loss UV-C laser diode</title><author>Zhang, Ziyi ; Kushimoto, Maki ; Sakai, Tadayoshi ; Sugiyama, Naoharu ; Schowalter, Leo J. ; Sasaoka, Chiaki ; Amano, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-3636f536a9245321e214bbdbae22dabc4dbd15b6765f4b086da0f2835eec3ac43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Absorptivity</topic><topic>AlGaN</topic><topic>Coupled modes</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Electric contacts</topic><topic>Laser Diodes</topic><topic>Modelling</topic><topic>Optical pumping</topic><topic>Semiconductor lasers</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Ultraviolet</topic><topic>Ultraviolet lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Ziyi</creatorcontrib><creatorcontrib>Kushimoto, Maki</creatorcontrib><creatorcontrib>Sakai, Tadayoshi</creatorcontrib><creatorcontrib>Sugiyama, Naoharu</creatorcontrib><creatorcontrib>Schowalter, Leo J.</creatorcontrib><creatorcontrib>Sasaoka, Chiaki</creatorcontrib><creatorcontrib>Amano, Hiroshi</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Ziyi</au><au>Kushimoto, Maki</au><au>Sakai, Tadayoshi</au><au>Sugiyama, Naoharu</au><au>Schowalter, Leo J.</au><au>Sasaoka, Chiaki</au><au>Amano, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and characterization of a low-optical-loss UV-C laser diode</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2020-09-01</date><risdate>2020</risdate><volume>59</volume><issue>9</issue><spage>94001</spage><pages>94001-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We present an optical modeling and characterization study of prototype ultraviolet laser diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of modal loss caused by optical mode coupling to the absorptive layers on the p-side (i.e. p-contact and p-metal layers). The transparent AlN substrates enabled optical pumping for measuring modal loss without requiring functioning LDs. The modal loss measured in this way was in good agreement with electrically evaluated results of processed LDs, and both results were consistent with optical modeling predictions. By using 0.32 m thick p-side cladding, we were able to suppress the modal loss of the designed LD structure to 8.4 cm−1, where the contribution from the absorptive p-contact layers was less than 3 cm−1.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/abaac6</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-9617-9049</orcidid><orcidid>https://orcid.org/0000-0003-3974-7139</orcidid><orcidid>https://orcid.org/0000-0002-4854-8521</orcidid></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2020-09, Vol.59 (9), p.94001 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_iop_journals_10_35848_1347_4065_abaac6 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Absorptivity AlGaN Coupled modes Crystal growth Crystal structure Electric contacts Laser Diodes Modelling Optical pumping Semiconductor lasers Single crystals Substrates Ultraviolet Ultraviolet lasers |
| title | Design and characterization of a low-optical-loss UV-C laser diode |
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