Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy

I report on the growth of a double-barrier β-(Al0.15Ga0.85)2O3/Ga2O3/(Al0.15Ga0.85)2O3 heterostructure and heavily Sn-doped β-Ga2O3 layers toward the application of resonant-tunneling diodes. The Ga2O3 and (AlGa)2O3 layers were grown on a β-Ga2O3 (010) substrate by plasma-assisted molecular-beam epi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2020-07, Vol.59 (7)
1. Verfasser:	Okumura, Hironori
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium Oxide Heavy Sn-doping Heterostructure PAMBE resonant-tunneling diode Terahertz application
Online-Zugang:	Volltext
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