Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection

Atomic layer deposition of Y2O3 thin films has been examined by multiple injections of tris-isopropylcyclopentadienyl yttrium [Y(iPrCp)3] precursors followed by remote oxygen plasma. By boosting or pressurizing the precursor cylinder higher than the chamber pressure, one can effectively deliver the precursor into the chamber. By increasing the number of shots before oxygen plasma exposure, the growth per cycle increases and shows saturation at 0.22 nm/cycle, close to the unit monolayer (ML) thickness of the Y2O3 film (0.23 nm). By selecting a proper number of shots, one can effectively utilize the precursor over other methods including bubbling delivery. A multiple boost injection method allows the utilization of low vapor pressure precursor to deposit films in a high-pressure environment.