Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by AlxGa1−xN back barrier

Threshold voltage (Vth) control of a GaN MOS transistor by AlxGa1−xN back barrier was systematically studied. Non-recessed GaN MOS HEMTs and recessed GaN MOS FETs with an AlxGa1−xN (x = 0%, 3%, 5%, 8%) back barrier layer were fabricated on the same 6 inch GaN-on-Si wafers and characterized. Al2O3 ga...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2020-04, Vol.59 (4)
Hauptverfasser:	Miyamoto, Hironobu, Okamoto, Yasuhiro, Nakayama, Tatsuo, Kawaguchi, Hiroshi, Fujita, Machiko, Ueda, Takehiro, Sawada, Masami
Format:	Artikel
Sprache:	eng
Schlagworte:	GaN MOS Transistor
Online-Zugang:	Volltext
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