Width dependence of drain current and carrier mobility in gate-all-around multi-channel polycrystalline silicon nanowire transistors with 10 nm width scale

The width dependences of characteristics of gate-all-around (GAA) polycrystalline silicon (poly-Si) transistors with 10 nm scale width were systematically investigated. The fabricated 14 nm wide GAA multi-channel poly-Si transistors exhibited excellent electrical properties including small subthresh...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2020-02, Vol.59 (2), p.21004
Hauptverfasser:	Jang, Ki-Hyun, Saraya, Takuya, Kobayashi, Masaharu, Sawamoto, Naomi, Ogura, Atsushi, Hiramoto, Toshiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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