In-Situ n-Type Doped Carrier-Injection Layers in GeSn Direct Bandgap LEDs for Methane Sensing

GeSn-based group-IV alloys are attracting great attention in the Si photonics community, as they are considered to be compatible with Complementary Metal Oxide Semiconductor (CMOS) technology. Alloying germanium with more than 8% of tin (Sn) results in direct bandgap semiconductors, with some optica...

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Veröffentlicht in:	Meeting abstracts (Electrochemical Society) 2024-11, Vol.MA2024-02 (32), p.2327-2327
Hauptverfasser:	Cardoux, Clement, Casiez, Lara, Chretien, Jeremie, Goulain, Paul, Frauenrath, Marvin, Pauc, Nicolas, Calvo, Vincent, Coudurier, Nicolas, Rodriguez, Philippe, Koelling, Sebastian, Moutanabbir, Oussama, Gravrand, Olivier, Hartmann, Jean-Michel, Tchelnokov, Alexei, Reboud, Vincent
Format:	Artikel
Sprache:	eng
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