Mitigation of Arsenic Contamination on the Back Side of Si Wafer Using SiO2 Protection Layer for III-V on Si Heterogeneous Epitaxy

In this paper, we have investigated a pathway to mitigate the arsenic (As) cross-contamination on a back side Si wafer during GaAs growth by metal-organic chemical vapor deposition (MOCVD). Without a proper protocol doing a III-V on Si heterogeneous epitaxy, we have observed high levels of the As co...

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Veröffentlicht in:	ECS journal of solid state science and technology 2016-01, Vol.5 (6), p.P349-P352
Hauptverfasser:	Lim, Sung-Kyu, Kim, Do-Kywn, Hwang, Hae-Chul, Kim, Jin-Su, Park, Won-Sang, Cho, Young-Dae, Shin, Chan-Soo, Park, Won-Kyu, Lee, Jung-Hee, Kim, Dae-Hyun, Lee, Hi-Deok
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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