Study of the Impact of H+ Mobile Ions on RF Performances of PECVD TEOS Silicon Dioxide Deposited at Low Temperature

In this paper, we study the impact of H+ mobile ions on Radio Frequency (RF) performances of silicon dioxide deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at low temperature (200°C), using a tetraethylorthosilicate (TEOS) - oxygen mixture as gas precursor. The presence of H+ ions wi...

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Veröffentlicht in:	ECS journal of solid state science and technology 2016-01, Vol.5 (10), p.N77-N80
Hauptverfasser:	Nguyen, Anh Phuong, Lüders, Ulrike, Voiron, Frederic
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Sciences Cristallography Material chemistry or physical chemistry Theoretical and
Online-Zugang:	Volltext
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