Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation

Atomically flattening technology was introduced to the widely used complementary metal oxide silicon process employing sallow trench isolation at the 0.22-μm technology node. Two methods were investigated. The first method is to apply the atomically flattening to the starting Si wafer, and the secon...

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Veröffentlicht in:	ECS journal of solid state science and technology 2016-01, Vol.5 (2), p.P67-P72
Hauptverfasser:	Goto, Tetsuya, Kuroda, Rihito, Akagawa, Naoya, Suwa, Tomoyuki, Teramoto, Akinobu, Li, Xiang, Obara, Toshiki, Kimoto, Daiki, Sugawa, Shigetoshi, Kamata, Yutaka, Kumagai, Yuki, Shibusawa, Katsuhiko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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