Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3
The energy band alignment between atomic layer deposited (ALD) high-k dielectrics of ZrO2 and HfO2 with n-type β-Ga2O3 was evaluated using x-Ray photoelectron spectroscopy. The valence band offset was found to be −0.3 ± 0.04 eV and −0.5 ± 0.04 eV for ZrO2and HfO2, respectively, which produced type I...
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creator | Wheeler, Virginia D. Shahin, David I. Tadjer, Marko J. Eddy, Charles R. |
description | The energy band alignment between atomic layer deposited (ALD) high-k dielectrics of ZrO2 and HfO2 with n-type β-Ga2O3 was evaluated using x-Ray photoelectron spectroscopy. The valence band offset was found to be −0.3 ± 0.04 eV and −0.5 ± 0.04 eV for ZrO2and HfO2, respectively, which produced type II, staggered gap alignments for both dielectrics with conduction band offsets greater than 1 eV. Capacitance-voltage measurements were conducted on metal-oxide-semiconductor (MOS) diodes and used to extract the dielectric constants (ɛ) of both oxides. ZrO2films had a nearly ideal ɛ of 24.7 (ɛ ∼ 25), while HfO2 exhibited a significantly lower ɛ of 14 (ɛ ∼ 25-30). These results, combined with the small hysteresis (≤0.09 eV) in the capacitance-voltage behavior for both films, is indicative of the high quality of these ALD oxides and their interface with the β-Ga2O3 making them potential candidates as gate dielectrics in power devices based on this relatively new ultra-wide bandgap material. |
doi_str_mv | 10.1149/2.0131702jss |
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The valence band offset was found to be −0.3 ± 0.04 eV and −0.5 ± 0.04 eV for ZrO2and HfO2, respectively, which produced type II, staggered gap alignments for both dielectrics with conduction band offsets greater than 1 eV. Capacitance-voltage measurements were conducted on metal-oxide-semiconductor (MOS) diodes and used to extract the dielectric constants (ɛ) of both oxides. ZrO2films had a nearly ideal ɛ of 24.7 (ɛ ∼ 25), while HfO2 exhibited a significantly lower ɛ of 14 (ɛ ∼ 25-30). These results, combined with the small hysteresis (≤0.09 eV) in the capacitance-voltage behavior for both films, is indicative of the high quality of these ALD oxides and their interface with the β-Ga2O3 making them potential candidates as gate dielectrics in power devices based on this relatively new ultra-wide bandgap material.</description><identifier>EISSN: 2162-8769</identifier><identifier>DOI: 10.1149/2.0131702jss</identifier><language>eng</language><publisher>The Electrochemical Society</publisher><ispartof>ECS journal of solid state science and technology, 2017, Vol.6 (2), p.Q3052-Q3055</ispartof><rights>2016 The Electrochemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/2.0131702jss/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,4024,27923,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Wheeler, Virginia D.</creatorcontrib><creatorcontrib>Shahin, David I.</creatorcontrib><creatorcontrib>Tadjer, Marko J.</creatorcontrib><creatorcontrib>Eddy, Charles R.</creatorcontrib><title>Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3</title><title>ECS journal of solid state science and technology</title><addtitle>ECS J. Solid State Sci. Technol</addtitle><description>The energy band alignment between atomic layer deposited (ALD) high-k dielectrics of ZrO2 and HfO2 with n-type β-Ga2O3 was evaluated using x-Ray photoelectron spectroscopy. The valence band offset was found to be −0.3 ± 0.04 eV and −0.5 ± 0.04 eV for ZrO2and HfO2, respectively, which produced type II, staggered gap alignments for both dielectrics with conduction band offsets greater than 1 eV. Capacitance-voltage measurements were conducted on metal-oxide-semiconductor (MOS) diodes and used to extract the dielectric constants (ɛ) of both oxides. ZrO2films had a nearly ideal ɛ of 24.7 (ɛ ∼ 25), while HfO2 exhibited a significantly lower ɛ of 14 (ɛ ∼ 25-30). These results, combined with the small hysteresis (≤0.09 eV) in the capacitance-voltage behavior for both films, is indicative of the high quality of these ALD oxides and their interface with the β-Ga2O3 making them potential candidates as gate dielectrics in power devices based on this relatively new ultra-wide bandgap material.</description><issn>2162-8769</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNpFkLFOwzAYhC0kJKrSjQfwWAYX279jJ2NpoUGKlAUWlsiJ7dYhTarYCPFaPAjPRCqQuOVuON1JH0I3jK4YE9kdX1EGTFHehnCBZpxJTlIlsyu0CKGlk2QqFPAZqu51b_C68_v-aPsY8ODwOg5H3-BCf9oRb-1pCD5ag1_HkuNzO3dTyP3-QN7w1tvONnH0TcAfPh7wknDKbvH3F9lpXsI1unS6C3bx53P08vjwvMlJUe6eNuuCeEYhEi20FcoltZCUKwNKKAEAtYFEA2eOOp4lFlJaS6Wp1EkDiTGNsnXjUpkJmKPl764fTlU7vI_99FYxWp15VLz65wE_nCNScw</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>Wheeler, Virginia D.</creator><creator>Shahin, David I.</creator><creator>Tadjer, Marko J.</creator><creator>Eddy, Charles R.</creator><general>The Electrochemical Society</general><scope/></search><sort><creationdate>2017</creationdate><title>Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3</title><author>Wheeler, Virginia D. ; Shahin, David I. ; Tadjer, Marko J. ; Eddy, Charles R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i103t-a4ae47f5b46027d37474333bd35a321f0f295e380b67a06a5c35ddc7ebcf86943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wheeler, Virginia D.</creatorcontrib><creatorcontrib>Shahin, David I.</creatorcontrib><creatorcontrib>Tadjer, Marko J.</creatorcontrib><creatorcontrib>Eddy, Charles R.</creatorcontrib><jtitle>ECS journal of solid state science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wheeler, Virginia D.</au><au>Shahin, David I.</au><au>Tadjer, Marko J.</au><au>Eddy, Charles R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3</atitle><jtitle>ECS journal of solid state science and technology</jtitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><date>2017</date><risdate>2017</risdate><volume>6</volume><issue>2</issue><spage>Q3052</spage><epage>Q3055</epage><pages>Q3052-Q3055</pages><eissn>2162-8769</eissn><abstract>The energy band alignment between atomic layer deposited (ALD) high-k dielectrics of ZrO2 and HfO2 with n-type β-Ga2O3 was evaluated using x-Ray photoelectron spectroscopy. The valence band offset was found to be −0.3 ± 0.04 eV and −0.5 ± 0.04 eV for ZrO2and HfO2, respectively, which produced type II, staggered gap alignments for both dielectrics with conduction band offsets greater than 1 eV. Capacitance-voltage measurements were conducted on metal-oxide-semiconductor (MOS) diodes and used to extract the dielectric constants (ɛ) of both oxides. ZrO2films had a nearly ideal ɛ of 24.7 (ɛ ∼ 25), while HfO2 exhibited a significantly lower ɛ of 14 (ɛ ∼ 25-30). These results, combined with the small hysteresis (≤0.09 eV) in the capacitance-voltage behavior for both films, is indicative of the high quality of these ALD oxides and their interface with the β-Ga2O3 making them potential candidates as gate dielectrics in power devices based on this relatively new ultra-wide bandgap material.</abstract><pub>The Electrochemical Society</pub><doi>10.1149/2.0131702jss</doi><tpages>4</tpages></addata></record> |
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title | Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3 |
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