Role of Bath Composition in Electroless Cu Seeding on Co Liner for through-Si Vias

To enable Cu fill of through-Si vias (TSV) with a high aspect ratio (diameter 3 μm, depth 50 μm), the electroless deposition of a Cu seed on Co liner material was investigated. The reducing agent glyoxylic acid showed anodic oxidation on Co, which did not appear for the case of formaldehyde. From el...

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Veröffentlicht in:	ECS journal of solid state science and technology 2015-01, Vol.4 (1), p.N3108-N3112
Hauptverfasser:	Inoue, Fumihiro, Philipsen, Harold, van der Veen, Marleen H., Van Huylenbroeck, Stefaan, Armini, Silvia, Struyf, Herbert, Tanaka, Tetsu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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