Gap Filling Model of O3-Tetraethylorthosilicate Film Formed on an Underlying Layer Pretreated with Organic Solvent

The gap filling model of O3-Tetraethylorthosilicate (TEOS) film on atmospheric pressure-chemical vapor deposition (AP-CVD) has never been clarified in detail. In order to clarify the gap filling model, we investigated the relationship between O3-TEOS film formation and the relative permittivity or polarity of organic solvent used for pretreatment. Polar organic solvents containing a proton adsorbed to the underlying layer showed that the C1s signal (284.6 eV) on XPS analysis increased with increasing relative permittivity of the organic solvents. These solvents impacted O3-TEOS film formation. By using solvents with a higher permittivity during pretreatment, the deposition rate (DR) on the pattern area increased; however it decreased on the flat area. In addition, the recovery of DR from O3 exposure was delayed by the increase in the relative permittivity of solvent used during pretreatment. Based on these results, a gap-filling model is proposed.