Optical Signature of the Electron Injection in Ga2O3
Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the varia...
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| Veröffentlicht in: | ECS journal of solid state science and technology 2017, Vol.6 (2), p.Q3049-Q3051 |
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| container_issue | 2 |
| container_start_page | Q3049 |
| container_title | ECS journal of solid state science and technology |
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| creator | Lee, Jonathan Flitsiyan, Elena Chernyak, Leonid Ahn, Shihyun Ren, Fan Yuna, Lin Pearton, Stephen J. Kim, Jihyun Meyler, Boris Salzman, Joseph |
| description | Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted β-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material. |
| doi_str_mv | 10.1149/2.0101702jss |
| format | Article |
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Solid State Sci. Technol</addtitle><date>2017</date><risdate>2017</risdate><volume>6</volume><issue>2</issue><spage>Q3049</spage><epage>Q3051</epage><pages>Q3049-Q3051</pages><eissn>2162-8769</eissn><abstract>Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted β-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material.</abstract><pub>The Electrochemical Society</pub><doi>10.1149/2.0101702jss</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | ECS journal of solid state science and technology, 2017, Vol.6 (2), p.Q3049-Q3051 |
| issn | 2162-8769 |
| language | eng |
| recordid | cdi_iop_journals_10_1149_2_0101702jss |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Optical Signature of the Electron Injection in Ga2O3 |
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