Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors

Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors

Vanadium oxide (VO2) thin films were prepared by atomic layer deposition using TEMAV (tetrakis[ethylmethylamido]vanadium) precursor and ozone as the reactant gas. Study on the precursor as well as oxidizer doses and temperature dependence showed none of them exhibited the characteristics of ideal AL...

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Veröffentlicht in:ECS journal of solid state science and technology 2012-08, Vol.1 (4), p.P169-P174
Hauptverfasser: Premkumar, Peter Antony, Toeller, Michael, Radu, Iuliana P., Adelmann, Christoph, Schaekers, Marc, Meersschaut, Johan, Conard, Thierry, Elshocht, Sven Van
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container_end_page P174
container_issue 4
container_start_page P169
container_title ECS journal of solid state science and technology
container_volume 1
creator Premkumar, Peter Antony
Toeller, Michael
Radu, Iuliana P.
Adelmann, Christoph
Schaekers, Marc
Meersschaut, Johan
Conard, Thierry
Elshocht, Sven Van
description Vanadium oxide (VO2) thin films were prepared by atomic layer deposition using TEMAV (tetrakis[ethylmethylamido]vanadium) precursor and ozone as the reactant gas. Study on the precursor as well as oxidizer doses and temperature dependence showed none of them exhibited the characteristics of ideal ALD. The VO2 phase formation pathways, its process window, and surface roughness are found to be sensitive to the anneal conditions applied and the substrate used. The VO2 morphology on Al2O3 was found to be island-like whereas on Si/SiO2 either a nano particle formation or a continuous film was obtained. GIXRD demonstrated the VO2 crystallization window to be very narrow on Al2O3 and thick SiO2 while a relatively broad window is obtained on 1 nm SiO2. A reversible change in sheet resistance was measured with more than three orders of magnitude for a 30 nm film.
doi_str_mv 10.1149/2.009204jss
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fullrecord <record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1149_2_009204jss</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>009204JSS</sourcerecordid><originalsourceid>FETCH-LOGICAL-i102t-568d510a88c1fae376efad8f31eb864fdc910af2313241504fd43f609d1ca8513</originalsourceid><addsrcrecordid>eNo9UDtPwzAY9AASVenEH_DGlOLPThxnjEILSEWpRNo1cv0gjkqC7GRIfz3hIW456e50Jx1Cd0DWAHH2QNeEZJTEbQhXaEGB00ikPLtBqxBaMoOLOGV0gcze98qEgN-GUU9YdhoXjfRSDca7ixxc3-He4mNJcdW4Dm_d-WMOT93QmOAuRuPThPPdIz4E173javOaH39aSob33qjRh96HW3Rt5TmY1R8v0WG7qYrnaFc-vRT5LnJA6BAlXOgEiBRCgZWGpdxYqYVlYE6Cx1arbHYtZcBoDAmZlZhZTjINSooE2BLd__a6_rNu-9F381oNpP4-pab1_ynsC4bMVc0</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Premkumar, Peter Antony ; Toeller, Michael ; Radu, Iuliana P. ; Adelmann, Christoph ; Schaekers, Marc ; Meersschaut, Johan ; Conard, Thierry ; Elshocht, Sven Van</creator><creatorcontrib>Premkumar, Peter Antony ; Toeller, Michael ; Radu, Iuliana P. ; Adelmann, Christoph ; Schaekers, Marc ; Meersschaut, Johan ; Conard, Thierry ; Elshocht, Sven Van</creatorcontrib><description>Vanadium oxide (VO2) thin films were prepared by atomic layer deposition using TEMAV (tetrakis[ethylmethylamido]vanadium) precursor and ozone as the reactant gas. Study on the precursor as well as oxidizer doses and temperature dependence showed none of them exhibited the characteristics of ideal ALD. The VO2 phase formation pathways, its process window, and surface roughness are found to be sensitive to the anneal conditions applied and the substrate used. The VO2 morphology on Al2O3 was found to be island-like whereas on Si/SiO2 either a nano particle formation or a continuous film was obtained. GIXRD demonstrated the VO2 crystallization window to be very narrow on Al2O3 and thick SiO2 while a relatively broad window is obtained on 1 nm SiO2. A reversible change in sheet resistance was measured with more than three orders of magnitude for a 30 nm film.</description><identifier>ISSN: 2162-8769</identifier><identifier>DOI: 10.1149/2.009204jss</identifier><language>eng</language><publisher>The Electrochemical Society</publisher><ispartof>ECS journal of solid state science and technology, 2012-08, Vol.1 (4), p.P169-P174</ispartof><rights>2012 The Electrochemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/2.009204jss/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Premkumar, Peter Antony</creatorcontrib><creatorcontrib>Toeller, Michael</creatorcontrib><creatorcontrib>Radu, Iuliana P.</creatorcontrib><creatorcontrib>Adelmann, Christoph</creatorcontrib><creatorcontrib>Schaekers, Marc</creatorcontrib><creatorcontrib>Meersschaut, Johan</creatorcontrib><creatorcontrib>Conard, Thierry</creatorcontrib><creatorcontrib>Elshocht, Sven Van</creatorcontrib><title>Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors</title><title>ECS journal of solid state science and technology</title><addtitle>ECS J. Solid State Sci. Technol</addtitle><description>Vanadium oxide (VO2) thin films were prepared by atomic layer deposition using TEMAV (tetrakis[ethylmethylamido]vanadium) precursor and ozone as the reactant gas. Study on the precursor as well as oxidizer doses and temperature dependence showed none of them exhibited the characteristics of ideal ALD. The VO2 phase formation pathways, its process window, and surface roughness are found to be sensitive to the anneal conditions applied and the substrate used. The VO2 morphology on Al2O3 was found to be island-like whereas on Si/SiO2 either a nano particle formation or a continuous film was obtained. GIXRD demonstrated the VO2 crystallization window to be very narrow on Al2O3 and thick SiO2 while a relatively broad window is obtained on 1 nm SiO2. A reversible change in sheet resistance was measured with more than three orders of magnitude for a 30 nm film.</description><issn>2162-8769</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNo9UDtPwzAY9AASVenEH_DGlOLPThxnjEILSEWpRNo1cv0gjkqC7GRIfz3hIW456e50Jx1Cd0DWAHH2QNeEZJTEbQhXaEGB00ikPLtBqxBaMoOLOGV0gcze98qEgN-GUU9YdhoXjfRSDca7ixxc3-He4mNJcdW4Dm_d-WMOT93QmOAuRuPThPPdIz4E173javOaH39aSob33qjRh96HW3Rt5TmY1R8v0WG7qYrnaFc-vRT5LnJA6BAlXOgEiBRCgZWGpdxYqYVlYE6Cx1arbHYtZcBoDAmZlZhZTjINSooE2BLd__a6_rNu-9F381oNpP4-pab1_ynsC4bMVc0</recordid><startdate>20120824</startdate><enddate>20120824</enddate><creator>Premkumar, Peter Antony</creator><creator>Toeller, Michael</creator><creator>Radu, Iuliana P.</creator><creator>Adelmann, Christoph</creator><creator>Schaekers, Marc</creator><creator>Meersschaut, Johan</creator><creator>Conard, Thierry</creator><creator>Elshocht, Sven Van</creator><general>The Electrochemical Society</general><scope/></search><sort><creationdate>20120824</creationdate><title>Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors</title><author>Premkumar, Peter Antony ; Toeller, Michael ; Radu, Iuliana P. ; Adelmann, Christoph ; Schaekers, Marc ; Meersschaut, Johan ; Conard, Thierry ; Elshocht, Sven Van</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i102t-568d510a88c1fae376efad8f31eb864fdc910af2313241504fd43f609d1ca8513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Premkumar, Peter Antony</creatorcontrib><creatorcontrib>Toeller, Michael</creatorcontrib><creatorcontrib>Radu, Iuliana P.</creatorcontrib><creatorcontrib>Adelmann, Christoph</creatorcontrib><creatorcontrib>Schaekers, Marc</creatorcontrib><creatorcontrib>Meersschaut, Johan</creatorcontrib><creatorcontrib>Conard, Thierry</creatorcontrib><creatorcontrib>Elshocht, Sven Van</creatorcontrib><jtitle>ECS journal of solid state science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Premkumar, Peter Antony</au><au>Toeller, Michael</au><au>Radu, Iuliana P.</au><au>Adelmann, Christoph</au><au>Schaekers, Marc</au><au>Meersschaut, Johan</au><au>Conard, Thierry</au><au>Elshocht, Sven Van</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors</atitle><jtitle>ECS journal of solid state science and technology</jtitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><date>2012-08-24</date><risdate>2012</risdate><volume>1</volume><issue>4</issue><spage>P169</spage><epage>P174</epage><pages>P169-P174</pages><issn>2162-8769</issn><abstract>Vanadium oxide (VO2) thin films were prepared by atomic layer deposition using TEMAV (tetrakis[ethylmethylamido]vanadium) precursor and ozone as the reactant gas. Study on the precursor as well as oxidizer doses and temperature dependence showed none of them exhibited the characteristics of ideal ALD. The VO2 phase formation pathways, its process window, and surface roughness are found to be sensitive to the anneal conditions applied and the substrate used. The VO2 morphology on Al2O3 was found to be island-like whereas on Si/SiO2 either a nano particle formation or a continuous film was obtained. GIXRD demonstrated the VO2 crystallization window to be very narrow on Al2O3 and thick SiO2 while a relatively broad window is obtained on 1 nm SiO2. A reversible change in sheet resistance was measured with more than three orders of magnitude for a 30 nm film.</abstract><pub>The Electrochemical Society</pub><doi>10.1149/2.009204jss</doi><tpages>6</tpages></addata></record>
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title Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T12%3A47%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Process%20Study%20and%20Characterization%20of%20VO2%20Thin%20Films%20Synthesized%20by%20ALD%20Using%20TEMAV%20and%20O3%20Precursors&rft.jtitle=ECS%20journal%20of%20solid%20state%20science%20and%20technology&rft.au=Premkumar,%20Peter%20Antony&rft.date=2012-08-24&rft.volume=1&rft.issue=4&rft.spage=P169&rft.epage=P174&rft.pages=P169-P174&rft.issn=2162-8769&rft_id=info:doi/10.1149/2.009204jss&rft_dat=%3Ciop%3E009204JSS%3C/iop%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true